Results 101 to 110 of about 11,306 (311)

Cation‐Driven Valence Change Mechanism in 2D AgCrS2 for Ultralow‐Power and Reliable Memristors

Advanced Science, EarlyView.
A 2D AgCrS2 volatile memristor is shown to switch via a cation‐driven valence change mechanism, where Ag+ reversibly intercalates into tetrahedral vacancies between CrS2 layers to form a conductive Ag2CrS2 pathway without elemental Ag metallization. The device exhibits 0.2 V switching, nA‐compliance power down to 200 pW, and endurance beyond 3 × 105 ...
Yueqi Su, Minghao Wang, Xiaolin Tai, Yuhua Liu, Yue Lin, Yuqiao Guo, Jing Peng, Yi Xie, Changzheng Wu   +8 more
wiley   +1 more source

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications

Advanced Science, EarlyView.
By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang, Yuxiang Yang, Baiqian Wang, Yaoyu Tao, Zelun Pan, Lei Cai, Teng Zhang, Longhao Yan, Xianbin Li, Yuchao Yang   +9 more
wiley   +1 more source

Estimation of the Cholesky Multivariate Stochastic Volatility Model Using Iterated Filtering

Ekonometria
Aim: The paper aims to propose a new estimation method for the Cholesky Multivariate Stochastic Volatility Model based on the iterated filtering algorithm (Ionides et al., 2006, 2015).
Piotr Szczepocki
doaj  

On the Optimal Choice of Strike Conventions in Exchange Option Pricing

Mathematics
An important but rarely-addressed option pricing question is how to choose appropriate strikes for implied volatility inputs when pricing more exotic multi-asset derivatives.
Elisa Alòs, Michael Coulon
doaj   +1 more source

Multi‐Physical Field Modulated P‐Bit Device Based on VO2 Thin Film

Advanced Science, EarlyView.
We have proposed a VO2‐based P‐bit device where synergistic multi‐physical field modulation enables real‐time tunability of randomness. Besides introducing a new phase‐change material‐based device approach for high‐performance P‐bits, this study also demonstrates a synergistic multi‐physical field modulation strategy that opens new opportunities for ...
Bowen Sun, Jianjun Li, Ting Zhou, Jinglin Zhu, Meiling Liu, Zhihan Lin, Chang Wang, Chengyu Li, Yingxue Chen, Xiaokun Huo, Chongwen Zou   +10 more
wiley   +1 more source

Low Power Optoelectronic Neuromorphic Memristor for In‐Sensor Computing and Multilevel Hardware Security Communications

Advanced Science, EarlyView.
ABSTRACT Conventional software‐based encryption faces mounting limitations in power efficiency and security, inspiring the development of emerging neuromorphic computing hardware encryption. This study presents a hardware‐level multi‐dimensional encryption paradigm utilizing optoelectronic neuromorphic devices with low energy consumption of 3.3 fJ ...
Bo Sun, Jinhao Zhang, Jialin Meng, Tianyu Wang   +3 more
wiley   +1 more source

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

Estimating a stochastic volatility model for DAX-Index options [PDF]

, 2003
Marzia Freo
openalex   +1 more source

All Organic Fully Integrated Neuromorphic Crossbar Array

Advanced Electronic Materials, EarlyView.
In this work, the first fully integrated crossbar array of electrochemical random‐access memory (ECRAM) that is composed entirely of organic materials is represented. This array can perform inference and in situ parallel training and is capable of classifying linearly separable 2D and 3D classification tasks with high accuracy.
Setareh Kazemzadeh, Tim Stevens, Yoeri van de Burgt   +2 more
wiley   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source