Results 121 to 130 of about 11,306 (311)

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Skew selection for factor stochastic volatility models. [PDF]

J Appl Stat, 2020
Nakajima J.
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

A multi-country dynamic factor model with stochastic volatility for euro area business cycle analysis. [PDF]

J Forecast, 2020
Huber F, Pfarrhofer M, Piribauer P.
europepmc   +1 more source

Numerical methods for foreign exchange option pricing under hybrid stochastic and local volatility models

, 2017
Andrei Cozma
openalex   +2 more sources

Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2

Advanced Electronic Materials, EarlyView.
Heterostructures of SiOx and vertically aligned MoS2 exhibit reliable threshold switching by guiding Ag ion migration through van der Waals gaps. Compared to SiOx‐only devices, these heterostructures demonstrate higher switching voltages, faster switching speeds, and reduced variability.
Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme   +9 more
wiley   +1 more source

Calibration and Option Pricing with Stochastic Volatility and Double Exponential Jumps [PDF]

Gaetano Agazzotti, Claudio Aglieri Rinella, Jean-Philippe Aguilar, Justin Kirkby   +3 more
openalex   +1 more source

Concealable and Field‐Free Physical Unclonable Function Based on Voltage‐Controlled Magnetic Tunnel Junctions

Advanced Electronic Materials, EarlyView.
A concealable physical unclonable function (PUF) based on an array of 384 nanoscale voltage‐controlled magnetic tunnel junctions is demonstrated. The PUF operates without any external magnetic field. It uses a combination of deterministic and stochastic switching mechanisms, based on the spin transfer torque and voltage‐controlled magnetic anisotropy ...
Thomas Neuner, Jaimin Kang, Jordan Athas, Christian Duffee, Noraica Davila Melendez, Jordan A. Katine, Pedram Khalili Amiri   +6 more
wiley   +1 more source

Portfolio Insurance Strategies: A Comparison of Standard Methods When the Volatility of the Stock is Stochastic

, 2003
Jean‐Luc Prigent, Philippe Bertrand
openalex   +1 more source

Dynamics of a mean-reverting stochastic volatility equation with regime switching [PDF]

, 2019
Yanling Zhu, Kai Wang, Yong Ren
openalex   +1 more source