Results 231 to 240 of about 49,441 (301)

A Dual‐Bioresponsive and Programmable Microneedle Matrix as a Bioinspired Coupler for Orchestrating Diabetic Bone Regeneration

open access: yesAdvanced Materials, EarlyView.
This project developed a smart bandage‐like patch (a microneedle array) for repairing diabetic bone damage. It intelligently senses signals from infection and inflammation, then releases its medicines in a specific, timed sequence: first an antibacterial agent, then an anti‐inflammatory agent, and finally growth factors.
Yu Wang   +10 more
wiley   +1 more source

Room-temperature ferrimagnetism and polar phase in strained La<sub>2</sub>CoRuO<sub>6</sub> films through 3d-4d cation engineering. [PDF]

open access: yesNat Commun
Li D   +22 more
europepmc   +1 more source

Nonlocal Metaspire: A Scalable Elastic Material Platform With Decoupled Mechanical Modes

open access: yesAdvanced Materials, EarlyView.
Nonlocal Metaspire introduces sequential rotation to realize wider scalability in implementing complex nonlocal couplings in elastic metamaterials while suppressing unintended mode coupling. Numerical results clarify the underlying wave motions, demonstrate mode‐decoupled roton and maxon formation, and support a straightforward extension to higher ...
Seung Han Kim   +3 more
wiley   +1 more source

Using a Zero‐Strain Reference Electrode to Distinguish Anode and Cathode Volume Changes in a Solid‐State Battery

open access: yesAdvanced Materials Interfaces, EarlyView.
Volume changes of a solid‐state battery cell are separated into the individual contributions of anode and cathode. Simultaneously determining the “reaction volumes” of both electrodes requires a reference electrode with a pressure‐independent potential.
Mervyn Soans   +5 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation

open access: yesAdvanced Materials Interfaces, EarlyView.
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales   +10 more
wiley   +1 more source

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