Results 201 to 210 of about 1,822 (256)

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

Computing Rate-Distortion Functions of Continuous Memoryless Sources via Discrete Algorithms: An Integrated Scheme with Convergence Guarantee and Algorithmic Acceleration. [PDF]

Entropy (Basel)
Chen L, Tang H, Wu H, Wu H, Wu S, Zhang W.   +5 more
europepmc   +1 more source

Machine Learning‐Assisted Design and Performance Prediction of a Compact Dual‐Band Polarization‐Insensitive THz Metamaterial Absorber for Skin‐Cancer‐Related Refractive‐Index Sensing

Advanced Electronic Materials, EarlyView.
A compact QASRR‐based THz metamaterial absorber enables polarization‐insensitive dual‐band absorption and skin‐cancer‐related refractive‐index sensing through measurable resonance shifts. Field, surface‐current, and circuit analyses clarify the dual‐resonance mechanism, while StackNet‐assisted prediction accurately estimates the simulated absorption ...
Md. Murad Kabir Nipun, S. M. Rifatur Rana, Md. Golam Morshed, Imrose Jahan, F. A. Sabbir Ahamed, Md. Jahedul Islam   +5 more
wiley   +1 more source

The Slovak Revised Dyadic Adjustment Scale: validation, factor structure, and population norms. [PDF]

Front Psychol
Halamová J, Kernová L.
europepmc   +1 more source

Low‐Field Giant Dielectric Tunability by Polaron‐Mediated Interfacial Polarization in Pulsed‐Laser‐Deposited‐Nanocrystalline/Amorphous Composite BaTiO3 Thin Films

Advanced Electronic Materials, EarlyView.
Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo, Taichi Murakami, Loick Pichon, Joël Leblanc‐Lavoie, Takashi Teranishi, Akira Kishimoto, Tomoaki Yamada, My Ali El Khakani   +7 more
wiley   +1 more source

A duality between utility transforms and probability distortions. [PDF]

Theory Decis
Chambers CP, Liu P, Wang R.
europepmc   +1 more source

Wavelength and Pulsewidth Tunable Flexible CsPbBr3 Perovskite Microlasers by Mechanical Stress Modulation

Advanced Electronic Materials, Volume 12, Issue 15, 10 August 2026.
Mechanically tunable all‐organic CsPbBr3 perovskite microlasers on a flexible PET substrate is demonstrated, enabling simultaneous wavelength and pulsewidth modulation of laser emission. The strain–photon synergetic coupling mechanism is revealed.
Zhaohuan Cai, Zhan Su, Fuyi Cao, Xiaobo Hu, Guoen Weng, Hidefumi Akiyama, Shaoqiang Chen   +6 more
wiley   +1 more source

Using mathematical constraints to explain narrow ranges for allele-sharing dissimilarities. [PDF]

Theor Popul Biol
Liu X, Ahsan Z, Rosenberg NA.
europepmc   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source