Results 191 to 200 of about 6,847,617 (250)
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Data-Driven Design of Self-Adhesive Epidermal Electrodes and Sensors. [PDF]
Li X +10 more
europepmc +1 more source
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo +10 more
wiley +1 more source
Transparency-Photothermal Efficiency Coordinated Dual-Invisible Soft Robots. [PDF]
Su M +5 more
europepmc +1 more source
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source
Synthetic Seismic Accelerogram Generation via Wavelet- Decomposed Conditional Generative Adversarial Networks. [PDF]
Rocca A, Laura L, Parrillo M.
europepmc +1 more source
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian +1 more
wiley +1 more source
An AR 3D Tracking and Registration Method That Integrates Optical Flow Tracking and Mean Shift. [PDF]
Yong J, Lei X, Dang J.
europepmc +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source

