Benchmarking of Ultrascaled Monolayer Halogenated Borophene Transistors: A Comprehensive First-Principles Quantum Transport Study. [PDF]
Zhang S +5 more
europepmc +1 more source
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong +9 more
wiley +1 more source
Prognostic value of subthreshold biphasic electromyographic (EMG) waveforms in Type I loss of signal during thyroid intraoperative neuromonitoring. [PDF]
Cheon YI, Kwon HN, Lee BJ, Shin SC.
europepmc +1 more source
Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices
The Digital Laser‐Induced Forward Transfer (LIFT) approach is employed to pattern and stack 2D materials with micrometer‐scale precision. PdSe2 and MoSe2 are assembled into vertical p–n junctions, with graphene serving as a transparent electrode. The resulting laser‐transferred heterostructures exhibit high material quality and stable rectifying ...
Ilias Cheliotis +12 more
wiley +1 more source
Can exercise truly alleviate mild-to-moderate and subthreshold depression? Evidence from randomized controlled trials. [PDF]
Li D +5 more
europepmc +1 more source
This study introduced a Ge‐Te‐S co‐sputtering process to resolve the performance trade‐off between GeTe and GeS in OTS selector devices, and improved device durability through nitrogen doping. Furthermore, in a 1S‐1R structure incorporating phase‐change memory devices, it simultaneously achieved excellent thermal stability, durability, high‐speed ...
Min Su Kang +6 more
wiley +1 more source
Subthreshold electric fields bidirectionally modulate neurotransmitter release through axon polarization. [PDF]
Aberra AS, Miles MW, Hoppa MB.
europepmc +1 more source
A Single‐Crystalline High‐κ K2Mo3O10 Dielectric for Two‐Dimensional Field‐Effect Transistors
K2Mo3O10 nanosheet can be synthesized by CVD method with a wide bandgap (∼4.09 eV) and high dielectric constant (∼39). The MoS2 FET with K2Mo3O10 as the top‐gate dielectric exhibits a steep SS as low as 76 mV dec−1 with an average of approximately 140 mV dec−1 and an on/off current ratio of up to 107 with an average of approximately 106.
Zhihang Zhang +7 more
wiley +1 more source
Nintendo Switch-Based Exergaming for Subthreshold Depression: Mixed Methods Randomized Controlled Trial. [PDF]
Huang K +6 more
europepmc +1 more source
ABSTRACT Background Isolated fetal pyelectasis is a common finding on second‐trimester ultrasound; however, optimal follow‐up strategies remain variable, often leading to inconsistent use of imaging and specialist services. This study aimed to evaluate clinical management pathways and outcomes and to identify factors associated with persistence ...
Ilona Lavender
wiley +1 more source

