Results 101 to 110 of about 12,284 (247)

Ga Doping Enables Precision Alloy‐to‐Wire Regulation: Synergistic Enhancement of the Mechanical Properties of CuSn Alloy and the Superconducting Properties of Nb3Sn

Advanced Science, EarlyView.
By adjusting Ga's doping in Cu–Sn alloy, an ultra‐high elongation of 100.8% is achieved in first time. Ga forms a stable solid solution structure and a stronger electron exchange with Cu. This enhances strength‐ductility synergistically by tuning SFE to balance twinning and slip.
Dazhuo Song, Juntao Zou, Jiayue Zhang, Xinhang Liang, Mengyu Shan, Yifan Liu, Jingqi Feng, Tong Dang, Lin Shi, Yuxuan Wang, Yuchen Song, Rong Fei, Shaodong Sun, Zhe Zhang, Lei Zhu, Lixing Sun   +15 more
wiley   +1 more source

Machine Learning Discovery of Record‐Low Lattice Thermal Conductivity in Double Perovskites

Advanced Science, EarlyView.
 A deep learning interatomic potential is introduced to predict forces for computing phonon properties and thermal transport behavior in double perovskites. Screening 9,709 compounds identifies 1,597 stable materials, and Boltzmann transport calculations including both three and four‐phonon scattering suggests a record‐low lattice thermal conductivity ...
Md Zaibul Anam, Alejandro Rodriguez, Riccardo Rurali, Ming Hu   +3 more
wiley   +1 more source

Two Distinct Phonon Wave Effects Control Thermal Transport across the Coherent–Incoherent Regime in Superlattices

Advanced Science, EarlyView.
Thermal transport in smooth‐interface superlattices is studied using the phonon Wigner transport equation, which captures both particle‐like and wave‐like contributions. A minimum in cross‐plane thermal conductivity emerges with increasing period thickness, signaling a crossover from coherent to incoherent phonon transport.
Jin Yang, Jingyi Zhu, Alan J. H. McGaughey, Wee‐Liat Ong   +3 more
wiley   +1 more source

Large Anomalous Hall Effect, Non‐Vanishing Berry Curvature in (110) FeRh Antiferromagnet Films via Interface Strain

Advanced Science, EarlyView.
This study demonstrates a strain‐tunable anomalous Hall response in the (110)‐oriented FeRh thin film. First‐principles calculations reveal that strain‐induced symmetry lowering redistributes Berry curvature near the Fermi level via band shifts and avoided crossings.
Yun‐Ho Kim, Gil‐Sung Kim, Jae Won Choi, Jung‐Min Cho, Won‐Yong Lee, Hongkee Yoon, Yeonho Choi, Shelby Fields, Steven Bennett, Mona Zebarjadi, Young‐Gui Yoon, Sang‐Kwon Lee   +11 more
wiley   +1 more source

Addressing Oxygen Embrittlement in Additively Manufactured Titanium via Cu‐Mediated Interstitial Site Engineering

Advanced Science, EarlyView.
A novel “Cu‐mediated interstitial site engineering” strategy is introduced to thermodynamically stabilize hexagonal oxygen (hex‐O) configurations in oxygen‐containing titanium alloys. The hex‐O configuration activates multiple slip systems and enhances dislocation pinning via long‐range repulsion.
Xiaobin Lin, Xudong Rong, Jiachen Xie, Xinru Wang, Jianteng Wang, Zhihang Xu, Dongdong Zhao, Shiwei Pan, Feng Qian, Longlong Ma, Gang Sha, Xiang Zhang, Chunsheng Shi, Chunnian He, Naiqin Zhao   +14 more
wiley   +1 more source

Boosting Photo‐Pyroelectric Effect via Tunable Polarization and Interfacial Defect Engineering

Advanced Science, EarlyView.
This study reports Ba(Ti0.85Zr0.15)O3 nanocatalysts with enhanced polarization and oxygen‐vacancy‐rich interfaces for efficient NIR‐II photo‐pyroelectric therapy. Zr doping boosts the pyroelectric coefficient and accelerates polarization switching, while oxygen vacancies improve photothermal conversion and surface reactivity.
Yanli Huang, Haifen Luo, Jie Yin, Shuai Cao, Gaolei Dong, Zhi Tan, Chunlin Zhao, Peiye Wen, Fengwei Sun, Shan Zhang, Xianzeng Zhang, Yunlu Dai, Zhen Yang, Wei Huang   +13 more
wiley   +1 more source

Semiconducting THO‐C3N Monolayers for Ultrahigh Anisotropic Carrier Mobility

Advanced Science, EarlyView.
A precise site‐specific N‐doping strategy that drives a secondary electronic transition in net W is proposed, enabling the electronic properties transition from metal to Dirac semimetal and ultimately to semiconductor. The obtained THO‐C3N‐2 and THO‐C3N‐3 semiconductors exhibit high carrier mobilities and pronounced mobility anisotropy, with THO‐C3N‐2 ...
Rui Tan, Xueqing Chen, Jifeng Luo, Zhe Xue, Zehou Li, Xiaolin Wei, Zhenkun Tang, Gaokuo Zhong   +7 more
wiley   +1 more source

Finding a Bravais lattice with higher symmetry from lattice parameters of a supercell

Science and Technology of Advanced Materials: Methods
We present an advanced algorithm that systematically identifies Bravais lattices from diffraction data, such as powder X-ray, as these data are crucial for new material development.
Yoyo Hinuma, Hiroyuki Ozaki
doaj   +1 more source

Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys

Advanced Science, EarlyView.
This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin, Cheng‐Wei Lee, Nate S.P. Bernstein, Thi Nguyen, Ande Bryan, Eli Cooper, John S. Mangum, Sage R. Bauers, Andriy Zakutayev, Keisuke Yazawa, Prashun Gorai, Rebecca W. Smaha   +11 more
wiley   +1 more source

Orientation‐Confinement‐Engineered Stabilization of Ferroelectricity in HfO2 toward Maximum Polarization

Advanced Science, EarlyView.
Ferroelectric phase stability in Hf₀.5Zr₀.5O2 films is enhanced by confinement to the (111) crystal orientation, as demonstrated by first‐principles calculations and experiments. Polarization approaching its maximum value is achieved through selective ferroelectric switching paths, which are further tuned by oxygen vacancies and cation doping to ...
Fatoye Sawyerr, Yongqing Sun, Zekun Zhang, Kang Jia, Shuning Lv, Qi Hu, Shu Shi, Qiushi Huang, Xie Zhang, Xiaoli Fan, Li‐min Liu, Shifeng Wen, Zheng Wen, Tengfei Cao, Jingsheng Chen   +14 more
wiley   +1 more source