Results 141 to 150 of about 20,207 (328)

Disorder Driven Anisotropic Nonlinear Hall Effect in the Kagome Metal YbCo6Ge6 at Room Temperature

open access: yesAdvanced Science, EarlyView.
The intrinsic structural disorder and short‐range correlated motifs in the kagome metal YbCo6Ge6 constitute the primary mechanism for a robust and anisotropic nonlinear Hall effect (NLHE). This effect is sustained across a wide temperature range, achieving a nonlinear responsivity of up to ∼4.5 × 10−3 m/V at 70 K, higher than known disordered and ...
Qurat Ul Ain   +11 more
wiley   +1 more source

A machine learning approach to predict tight-binding parameters for point defects via the projected density of states

open access: yesnpj Computational Materials
Calculating the impact of point defects on the macroscopic properties of technologically relevant semiconductors remains a considerable challenge.
Henry Phillip Fried   +3 more
doaj   +1 more source

Ultrahigh Interfacial Thermal Conductance across GaN/BAs Interfaces via Atomic‐Level Engineering

open access: yesAdvanced Science, EarlyView.
The integration of gallium nitride (GaN) with ultrahigh‐thermal‐conductivity boron arsenide (BAs) substrates represents a promising pathway for developing next‐generation high‐power devices. The heat dissipation capability of such integrated systems is fundamentally governed by thermal transport across GaN/BAs interfaces, and buffer layers such as ...
Linfeng Yu   +10 more
wiley   +1 more source

Crystallized Domain Walls in HfO2 Enable Chessboard‐Type Ultra‐High‐Dense Ferroelectric Memory

open access: yesAdvanced Science, EarlyView.
In general, DWs in ferroelectrics stabilize within a widely spread transition region between two oppositely polarized domains, which severely limits the achievable memory density. Here, the reported DWs in HfO2 constitute perfect crystalline structures along arbitrary crystallographic directions, enabling the formation of the narrowest square‐shaped ...
Pawan Kumar   +4 more
wiley   +1 more source

Multi-case Study of Left-flank Boundaries within Supercells [PDF]

open access: yes
This study investigates the prevalence and significance of forward-flank convergence boundaries (FFCBs) and left-flank convergence boundaries (LFCBs) in shaping the structure and intensity of supercells, using observational data from various field ...
Stevenson, Peyton B.
core  

Engineering Borophene Band Structure Through Thickness

open access: yesAdvanced Science, EarlyView.
Borophene grown on W(110) shows a thickness‐dependent evolution of its structural and electronic properties. Surface microscopy, diffraction, XPS, and ARPES reveal distinct monolayer and bilayer phases. The formation of the second layer is accompanied by structural reconstruction, changes in chemical properties, and new ARPES features, demonstrating ...
Matteo Jugovac   +4 more
wiley   +1 more source

Multiscale Processes Leading to Supercells in the Landfalling Outer Rainbands of Hurricane Katrina (2005)

open access: yes, 2011
Shallow supercells are frequently observed within the outer rainbands—both onshore and offshore—of landfalling tropical cyclones (TCs). Such supercells can produce tornadoes along the coast even when the center of the parent TC is hundreds of kilometers ...
Paul Markowski   +2 more
core   +1 more source

Polar nanoregions in Pb(Mg1/3Nb2/3)O3 (PMN): insights from a supercell approach

open access: yesOpen Physics, 2011
Klotins Eriks   +4 more
doaj   +1 more source

Visualizing a Li‐Depleted Amorphous Cathode–Electrolyte Interphase in Sulfide Solid‐State Batteries Using In Situ Cryogenic Electron Microscopy

open access: yesAdvanced Science, EarlyView.
In situ cryogenic STEM‐EELS and electron diffraction directly visualize Li depletion and structural degradation at the NCM523/Li6PS5Cl interface during charging. The results reveal a Li‐depleted amorphous interphase that impedes Li transport, while LiNbOy coating suppresses interfacial degradation and preserves the solid‐electrolyte structure ...
Yuki Nomura   +10 more
wiley   +1 more source

An accurate DFT-1/2 approach for shallow defect states: efficient calculation of donor binding energies in silicon

open access: yesnpj Computational Materials
Accurate prediction of shallow donor electron binding energies is critical for device modeling, dopant activation, and donor-based quantum technologies.
Joshua Claes   +4 more
doaj   +1 more source

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