Results 91 to 100 of about 187,197 (266)

Observation of ν = 5/2 Fractional Quantum Hall Effect in Trilayer Graphene Proximitized by V‐Doped WSe2

open access: yesAdvanced Materials, EarlyView.
Even‐denominator 5/2 fractional state in trilayer graphene/V‐doped WSe2 heterostructure, mediated by proximitized magnetism, is demonstrated. An exceptionally high energy gap ∆5/2 (48 K) for the 5/2 state, significantly surpassing previous values in semiconductors and bilayer graphene (∆5/2 < 1 K) is reported.
Pramod Ghising   +7 more
wiley   +1 more source

Quantum Phase Transitions in Graphene Coupled to a Twisted WSe2 Moiré Ferroelectricity

open access: yesAdvanced Materials, EarlyView.
Moiré ferroelectricity in twisted WSe2 (t‐WSe2) breaks graphene's sublattice symmetry, inducing a room‐temperature metal‐insulator transition. Coupling graphene with ferroelectric domains of t‐WSe2 creates local Dirac points and metallic phases with Fermi‐liquid and non‐Fermi‐liquid behavior.
Budhi Singh   +17 more
wiley   +1 more source

Advanced drug delivery via self-assembled monolayer-coated nanoparticles

open access: yesAIMS Bioengineering, 2017
Nanotechnology has greatly enhanced the field of medicine over the last decade. Within this field, advances in nanoparticle research have rendered them attractive candidates for drug delivery.
Amin Shakiba   +3 more
doaj   +1 more source

Microscopic Theory of Superconductivity [PDF]

open access: bronze, 1957
J. Bardeen   +2 more
openalex   +1 more source

Band Offsets from Angle‐Resolved Valence Band Photoemission Spectroscopy

open access: yesAdvanced Materials Interfaces, EarlyView.
Soft X‐ray Angle‐Resolved Photoemission Spectroscopy (SX‐ARPES) is employed to quantify conduction band offsets at semiconductor surfaces and interfaces by fitting valence band photoemission spectra. This method surpasses traditional techniques, providing accurate results for InAs and InSb systems.
Procopios Constantinou   +11 more
wiley   +1 more source

Scalable Programming of LaAlO3/SrTiO3 Interfaces via Ultra‐Low‐Voltage Electron‐Beam Lithography

open access: yesAdvanced Materials Interfaces, EarlyView.
Ultra‐low‐voltage electron beam lithography (ULV‐EBL) enables rapid and scalable patterning of LaAlO3/SrTiO3 interfaces into nanowires, barriers, and waveguides that reveal 1D superconductivity, nonlinear current‐voltage response, and ballistic transport.
Dengyu Yang   +7 more
wiley   +1 more source

Discovery of ZrCoBi based half Heuslers with high thermoelectric conversion efficiency

open access: yesNature Communications, 2018
Identifying new compounds with intrinsically high conversion efficiency is the key to demonstrating next-generation thermoelectric modules. Here, Zhu et al.
Hangtian Zhu   +16 more
doaj   +1 more source

Refined Epitaxial Growth of YbRh2Si2 Thin Films

open access: yesAdvanced Materials Interfaces, EarlyView.
Epitaxial thin films of the heavy fermion compound YbRh2Si2 have opened new possibilities for investigating the strange metal state. This study enhances the crystallinity and surface smoothness of YbRh2Si2 thin films grown by molecular beam epitaxy.
Stefania Isceri   +20 more
wiley   +1 more source

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