5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu +8 more
wiley +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Advancing Energy Materials by In Situ Atomic Scale Methods
Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss +21 more
wiley +1 more source
Sinusoidal Displacement Describes Disorder in CsPbBr<sub>3</sub> Nanocrystal Superlattices. [PDF]
Filippi U +14 more
europepmc +1 more source
Aqueous Zinc‐Based Batteries: Active Materials, Device Design, and Future Perspectives
This review conducts a comprehensive analysis of aqueous zinc‐based batteries (AZBs) based on their intrinsic mechanisms, including redox reactions, ion intercalation reactions, alloying reactions, electrochemical double‐layer reactions, and mixed mechanisms, systematically discussing recent advancements in each type of AZBs.
Yan Ran, Fang Dong, Shuhui Sun, Yong Lei
wiley +1 more source
Low bias negative differential resistance in WSe<sub>2</sub>/MoS<sub>2</sub> Planar Superlattice Diodes. [PDF]
Hashemi R, Shojaei S.
europepmc +1 more source
This review highlights the use of atomic layer deposition (ALD) for fabricating thermoelectric thin films with atomic‐scale control. Four material classes—chalcogenides, doped oxides, ternary oxides, and multilayered structures—are compared in terms of growth dynamics, structure–property relationships, and thermoelectric performance. The precise tuning
Jorge Luis Vazquez‐Arce +5 more
wiley +1 more source
Guidelines for the Optimization of Hafnia-Based Ferroelectrics through Superlattice Engineering. [PDF]
van Gent González J +7 more
europepmc +1 more source
From Materials to Systems: Challenges and Solutions for Fast‐Charge/Discharge Na‐Ion Batteries
This review systematically analyzes the key characteristics limiting the fast‐charge/discharge capability of Na‐ion batteries (SIBs) from a multi‐scale perspective encompassing electrode materials, the electrode‐electrolyte interface, and the system. Furthermore, it presents practical solution strategies for the fundamental issues arising at each scale,
Bonyoung Ku +5 more
wiley +1 more source
Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy. [PDF]
SNOM imaging and spectroscopy on a mechanically cleaved facet is used to characterize the different layers of complex epitaxial heterostructures composed of a type II superlattice and highly doped semiconductors. Both the geometrical parameters of the stack and the optical properties of the individual layers and of the interfaces are retrieved, as well
Tailpied L +8 more
europepmc +2 more sources

