Results 121 to 130 of about 62,219 (286)

Structurally Complex Precipitates Enhance Strength‐Ductility Synergy in a Duplex Medium Entropy Alloy

open access: yesAdvanced Science, EarlyView.
Strong‐yet‐ductile precipitation‐hardening alloys require novel microstructural complexity of precipitates in particularly at cryogenic condition, to constantly impart strain hardening of hard‐and‐brittle precipitates. The present work creates innovative structurally complex precipitates assembled with dispersed nanocores and a chemical‐heterogeneity ...
Shaohua Gao   +9 more
wiley   +1 more source

Emergent Spin Fluctuation and Structural Metastability in Self‐Intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ Compounds

open access: yesAdvanced Electronic Materials, EarlyView.
Metastable superstructure and emergent spin fluctuation in self‐intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ ABSTRACT Intercalated van der Waals (vdW) magnetic materials host unique magnetic properties due to the interplay of competing interlayer and intralayer exchange couplings, which depend on the intercalant concentration within the van der ...
Clayton Conner   +15 more
wiley   +1 more source

Thermal conductivity engineering of bulk and one-dimensional Si-Ge nanoarchitectures

open access: yesScience and Technology of Advanced Materials, 2017
Various theoretical and experimental methods are utilized to investigate the thermal conductivity of nanostructured materials; this is a critical parameter to increase performance of thermoelectric devices.
Ali Kandemir   +3 more
doaj   +1 more source

Deep Sight of Temperature‐Dependent Wake‐Up Effect of Hf0.5Zr0.5O2 Capacitors and Characterization

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Doped HfO2 ferroelectrics have attracted significant attention owing to their compatibility with CMOS processes in memory applications. The evolution of phases in doped HfO2 films during the wake‐up process remains a subject of ongoing interest.
Zichong Zhang   +8 more
wiley   +1 more source

Ferroelectric HfO2/ZrO2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity

open access: yesAdvanced Electronic Materials, EarlyView.
“Enhanced wafer‐scale device uniformity on 150 mm wafers is demonstrated using ferroelectric superlattice HfO2/ZrO2 (HZO) capacitors, as compared to conventional solid solution HZO capacitors. Superlattice HZO exhibits improved ferroelectric memory properties, including a broader polarization window, greater endurance, reduced leakage, and superior ...
Oscar Kaatranen   +4 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Topological Materials and Related Applications

open access: yesAdvanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti   +9 more
wiley   +1 more source

Interindividual- and blood-correlated sweat phenylalanine multimodal analytical biochips for tracking exercise metabolism

open access: yesNature Communications
In situ monitoring of endogenous amino acid loss through sweat can provide physiological insights into health and metabolism. However, existing amino acid biosensors are unable to quantitatively assess metabolic status during exercise and are rarely used
Bowen Zhong   +10 more
doaj   +1 more source

Electric Field‐Induced Hole‐ and Electron‐Type Flat Bands in Twisted Double Bilayer Graphene

open access: yesAdvanced Electronic Materials, EarlyView.
The electronic structure of twisted double bilayer graphene is visualized using angle‐resolved photoemission spectroscopy with micrometer spatial resolution at twists of 3.1∘$^\circ$ and 6.0∘$^\circ$ as a function of gate voltage. Tunable hybridization effects and flat band formation occurs between valence and conduction band states due to a finite ...
Zhihao Jiang   +13 more
wiley   +1 more source

Direct bandgap emission from strain-doped germanium

open access: yesNature Communications
Germanium (Ge) is an attractive material for Silicon (Si) compatible optoelectronics, but the nature of its indirect bandgap renders it an inefficient light emitter.
Lin-Ding Yuan, Shu-Shen Li, Jun-Wei Luo
doaj   +1 more source

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