Results 161 to 170 of about 124,365 (283)

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

open access: yesAdvanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Wood‐Based Bioelectronics: Lignosulfonate‐Based Conductive Biocomposites for Paper Organic Electrochemical Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Biodegradable wood‐based bioelectronics are realized by integrating poly (2,3‐ethylenedioxythiopene:lignosulfonate (PEDOT:LigS) as a mixed ionicelectronic channel in organic electrochemical transistors fabricated on paper substrates. The biocomposite exhibits high conductivity, biocompatibility, and strong transistor performance, while devices built on
Katharina Matura   +8 more
wiley   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

open access: yesAdvanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar   +9 more
wiley   +1 more source

Gravitational form factors of the Higgs boson. [PDF]

open access: yesEur Phys J C Part Fields
Beißner P   +3 more
europepmc   +1 more source

Array‐Level Characterization of Cryogenic RRAM

open access: yesAdvanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu   +7 more
wiley   +1 more source

Research Progress and Applications of Non‐Carrier‐Injection Electroluminescence

open access: yesAdvanced Electronic Materials, EarlyView.
Non‐carrier‐injection electroluminescence (NCI‐EL) uses AC fields and displacement currents to trigger light from internal charge reservoirs, enabling minimalist emitters with remotely coupled terminals. This review maps shared mechanisms across organics, GaN, quantum dots, and TMDCs, compares planar, interdigital, single‐terminal, and coaxial designs,
Wei Huang   +6 more
wiley   +1 more source

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