Results 161 to 170 of about 6,746,161 (288)

A Geometrically Transient Platform for Bioelectronic Implants

open access: yesAdvanced Materials, EarlyView.
Minimally invasive bioelectronic implants often compromise performance for smaller sizes. To resolve this optimization dilemma, a wireless bioelectronic implant with a transient geometry is introduced (MiFi). The origami‐inspired device miniaturizes up to sixfold for syringe insertion and autonomously unfolds post‐implantation.
Selin Olenik   +13 more
wiley   +1 more source

CVD Grown Hybrid MoSe2–WSe2 Lateral/Vertical Heterostructures With Strong Interlayer Exciton Emission

open access: yesAdvanced Materials, EarlyView.
A scalable bottom‐up CVD methodology, based on liquid transition metal salt precursors, is presented for the controlled growth of two high‐quality MoSe2–WSe2 heterostructures (HSs): purely lateral (HS I) and hybrid lateral/vertical (HS II), by simply adjusting precursor concentration.
Md Tarik Hossain   +16 more
wiley   +1 more source

Evolution mechanism of (100) diamond etch pits and dislocations. [PDF]

open access: yesRSC Adv
Ren G   +9 more
europepmc   +1 more source

From Fiber Bundles to Architected Membranes: Triply Periodic Minimal Surface Architectures for Biohybrid Artificial Lungs

open access: yesAdvanced Materials, EarlyView.
Additively manufactured triply periodic minimal surface (TPMS) membranes offer an architecture‐driven alternative to hollow fiber bundles in artificial lungs. Multiphysics simulations and endothelialized prototypes show that the 3D‐printable membrane architecture improves gas exchange, blood flow distribution, and hemocompatibility, enabling ...
Michael Pflaum   +14 more
wiley   +1 more source

Soft Skins With Reversible Thickness Morphing: Materials, Mechanisms, and Applications

open access: yesAdvanced Materials, EarlyView.
Evolution of electronic skin (e‐skin) technologies toward adaptive, multifunctional soft skins. Phase I highlights early rigid and discrete sensory interfaces. Phase II shows the transition toward flexible, stretchable, and large‐area e‐skin. Phase III captures the emergence of computational e‐skin.
Oliver Ozioko   +2 more
wiley   +1 more source

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

open access: yesAdvanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee   +15 more
wiley   +1 more source

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