Designing a Robust Kelvin Probe Setup Optimized for Long-Term Surface Photovoltage Acquisition [PDF]
We introduce a robust low-budget Kelvin probe design that is optimized for the long-term acquisition of surface photovoltage (SPV) data, especially developed for highly resistive systems, which exhibit—in contrast to conventional semiconductors ...
Elke Beyreuther +2 more
doaj +2 more sources
Synthesis Control of Charge Separation at Anatase TiO2 Thin Films Studied by Transient Surface Photovoltage Spectroscopy. [PDF]
Dittrich T +6 more
europepmc +2 more sources
Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy. [PDF]
Qian Y +7 more
europepmc +3 more sources
Toward Understanding the Built-in Field in Perovskite Solar Cells through Layer-by-Layer Surface Photovoltage Measurements. [PDF]
Gutierrez-Partida E +16 more
europepmc +3 more sources
Dipolar modulation of surface states in GaN via molecular ionization energy [PDF]
Gallium nitride (GaN) surface states play a pivotal role in determining device performance and stability. Here, we show that adsorption of molecules with varying ionization energies modulates GaN surface states, as revealed by surface photovoltage and X ...
Or Haim Chaulker +4 more
doaj +2 more sources
Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer
The integration of silver nanowire (AgNW) networks with MoS2/ZnO heterojunctions leads to a remarkable enhancement in surface photovoltage (SPV) response. In the visible wavelength range, the heterojunctions with AgNWs achieve an SPV signal of ≈200 mV, a
Anh Thi Nguyen +8 more
doaj +2 more sources
Transient surface photovoltage studies of bare and Ni-filled porous silicon performed in different ambients. [PDF]
Granitzer P +3 more
europepmc +3 more sources
The Mg related GaN blue luminescence deep level and its connection to an MgO surface state [PDF]
GaN is taking over from silicon in power electronics, but its density of interface states has yet to be adequately controlled. The major step turning GaN into a technological semiconductor was its p-type doping.
Or H. Chaulker +2 more
doaj +2 more sources
Surface Photovoltage-Induced Ultralow Work Function Material for Thermionic Energy Converters. [PDF]
Schindler P +9 more
europepmc +3 more sources
Surface photovoltage analysis of phase transformation of copper in p-type silicon [PDF]
Deepak A. Ramappa
openalex +3 more sources

