Results 11 to 20 of about 4,367 (288)

Designing a Robust Kelvin Probe Setup Optimized for Long-Term Surface Photovoltage Acquisition [PDF]

open access: yesSensors, 2018
We introduce a robust low-budget Kelvin probe design that is optimized for the long-term acquisition of surface photovoltage (SPV) data, especially developed for highly resistive systems, which exhibit—in contrast to conventional semiconductors ...
Elke Beyreuther   +2 more
doaj   +2 more sources

Synthesis Control of Charge Separation at Anatase TiO2 Thin Films Studied by Transient Surface Photovoltage Spectroscopy. [PDF]

open access: hybridACS Appl Mater Interfaces, 2022
Dittrich T   +6 more
europepmc   +2 more sources

Toward Understanding the Built-in Field in Perovskite Solar Cells through Layer-by-Layer Surface Photovoltage Measurements. [PDF]

open access: hybridACS Appl Mater Interfaces
Gutierrez-Partida E   +16 more
europepmc   +3 more sources

Dipolar modulation of surface states in GaN via molecular ionization energy [PDF]

open access: yesScientific Reports
Gallium nitride (GaN) surface states play a pivotal role in determining device performance and stability. Here, we show that adsorption of molecules with varying ionization energies modulates GaN surface states, as revealed by surface photovoltage and X ...
Or Haim Chaulker   +4 more
doaj   +2 more sources

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

open access: yesAdvanced Electronic Materials
The integration of silver nanowire (AgNW) networks with MoS2/ZnO heterojunctions leads to a remarkable enhancement in surface photovoltage (SPV) response. In the visible wavelength range, the heterojunctions with AgNWs achieve an SPV signal of ≈200 mV, a
Anh Thi Nguyen   +8 more
doaj   +2 more sources

The Mg related GaN blue luminescence deep level and its connection to an MgO surface state [PDF]

open access: yesScientific Reports
GaN is taking over from silicon in power electronics, but its density of interface states has yet to be adequately controlled. The major step turning GaN into a technological semiconductor was its p-type doping.
Or H. Chaulker   +2 more
doaj   +2 more sources

Surface Photovoltage-Induced Ultralow Work Function Material for Thermionic Energy Converters. [PDF]

open access: greenACS Energy Lett, 2019
Schindler P   +9 more
europepmc   +3 more sources

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