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(110)-Surface Strained-Channel MOSFETs
ECS Meeting AbstractsImprovement of semiconductor device performances have been brought about by innovations in device structures such as SOI, FinFET and gate-all around FET. The FinFET devices saw a remarkable success owing to their high hole mobility. FinFET devices attain this preferable feature by having the (110)-surface channel. Recently, considerable progress has
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Energies of Strained Surfaces and Barrierless Formation of Strained Islands
Physical Review Letters, 2003V M, Kaganer, K H, Ploog
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Surface relaxation and initial surface corrosion of strained Mo(100) surface
Applied Surface Science, 2022Fuzhu Liu, Xiangdong Ding, Jun Sun
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