Results 111 to 120 of about 6,832 (181)

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

open access: yesAdvanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu   +5 more
wiley   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

open access: yesAdvanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun   +8 more
wiley   +1 more source

Revealing the Hidden Role of Cd in p‐Type Mg3Sb2: Enhanced Thermoelectric Performance by Grain Boundary Segregation Engineering

open access: yesAdvanced Functional Materials, EarlyView.
The hidden role of Cd segregation at grain boundaries is revealed in p‐type Mg3Sb2 by atom probe tomography and other advanced characterizations. Grain boundary Cd enrichment suppresses the SbMg+ hole‐killer formation and lowers potential barriers, enhancing electrical conductivity.
Zhou Li   +12 more
wiley   +1 more source

Unlocking Photodetection Mode Switching from a Simple Lateral Design

open access: yesAdvanced Functional Materials, EarlyView.
A simple lateral 2D perovskite photodetector capable of switching among transient, continuous, and dual transient/continuous photoresponse modes is achieved by integrating photoconductive effects with capacitive coupling from the SiO2/Si substrate. Such light‐programmable photodetection mode switching enables triple‐channel information transmission and
Zijun (June) Yong   +10 more
wiley   +1 more source

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