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Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

A mechanism for telomere-specific telomere length regulation. [PDF]

open access: yesNucleic Acids Res
Teplitz GM   +8 more
europepmc   +1 more source

ROFI: a deep learning-based ophthalmic sign-preserving and reversible patient face anonymizer. [PDF]

open access: yesNPJ Digit Med
Tian Y   +21 more
europepmc   +1 more source

Fast Valuation of Forward-Starting Basket Default Swaps

open access: green, 2010
Kenneth R. Jackson   +2 more
openalex   +1 more source

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