Results 161 to 170 of about 239,598 (305)

A new single input common ground seven level triple boost switched capacitor based inverter. [PDF]

Sci Rep
Hosseinzadeh A, Alipour H, Pouladi J, Mohammadian L, Abedinzadeh T.   +4 more
europepmc   +1 more source

Liquid‐Crystal‐Based Reconfigurable Intelligent Surface for 7 GHz Mobile Communication

Advanced Materials Technologies, EarlyView.
The glass‐based liquid‐crystal reconfigurable intelligent surface (LC‐RIS) integrates active‐matrix driving and blind‐greedy phase optimization within a 5G‐NR OFDM framework. This enables continuously tunable and autonomous enhancement of wireless coverage. Leveraging the transparency and manufacturability of liquid crystal panels, it is ideally suited
Tien‐Lun Ting, Yuh‐Chyi Chang, Yi‐Chan Hung, Cheng‐Yuan Hsiao, Chao‐Kai Wen, Tsung‐Hsien Lin   +5 more
wiley   +1 more source

High-gain boost-type switched capacitor nine-level inverter topology with reduced device count. [PDF]

Sci Rep
Alaas Z.
europepmc   +1 more source

Toward Perception‐Native Electronic Skin: Bio‐Inspired In‐/Near‐Sensor and Neuromorphic Computing for Humanoid Robots

Advanced Materials Technologies, EarlyView.
Dense tactile streams from across the humanoid body converge on collide in a central wiring and data bottleneck. By relocating computation closer to and then into the skin itself, near‐ and in‐sensor architectures, together with neuromorphic computing, chart a path toward perception‐native electronic skin, in which the conversion of stimulus into ...
Mijin Kim, Chang‐Jae Beak, Jiyoung Park, Youngdo Jung, Sunjong Oh, Sin‐Hyung Lee, Bo‐Yeon Lee   +6 more
wiley   +1 more source

High boost switched capacitor based 13L CG transformerless inverter for cost effective grid integration. [PDF]

Sci Rep
Hemalatha S, Balamurugan S, Gopinath NP, Sathik MJ.   +3 more
europepmc   +1 more source

Vertical Gate‐All‐Around SiGeSn/GeSn/SiGeSn Nanowire Transistors for Energy‐Efficient Electronics

Advanced Materials Technologies, EarlyView.
Band‐engineered SiGeSn/GeSn/SiGeSn heterostructures enable complementary vertical nanowire MOSFETs and steep slope tunnel FETs (TFETs) within a unified Group‐IV platform. Leakage suppression and tunnelling‐path engineering demonstrate an effective strategy for future low‐power and energy‐efficient integrated electronics.
Kenta Moto, Yannik Junk, Marvin Frauenrath, Florian Bärwolf, Jean‐Michel Hartmann, Andreas Mai, Detlev Grützmacher, Joachim Knoch, Dan Buca, Qing‐Tai Zhao   +9 more
wiley   +1 more source

A symmetric single phase diode assisted dual boost Z-source switched capacitor seven level inverter with modified SPWM. [PDF]

Sci Rep
Hosseini S, Hosseini SH, Sabahi M, Khounjahan H, Nadermohammadi A.   +4 more
europepmc   +1 more source

Terahertz Phase Inversion via Field‐Free Spin‐Orbit Torque Switching in an Antenna‐Integrated Spintronic Heterostructure

Advanced Optical Materials, EarlyView.
This work demonstrates fast electrical control of the phase of broadband terahertz pulses using a field‐free spintronic emitter. An antenna‐integrated Ta/CoFeB/Pt heterostructure switches its magnetization through spin‐orbit torque with 1 μs$\umu{\rm s}$ electrical pulses, producing complete π$\pi$‐phase inversion without external magnetic fields ...
Amir Khan, Tiago de Oliveira Schneider, Suraj Joshi, Mohammad Faraz Abdullah, Reshma Rajeev Lekha, Sascha Preu, Markus Meinert   +6 more
wiley   +1 more source

An eleven level single source switched capacitor boost inverter with reduced component stress and limited inrush current. [PDF]

Sci Rep
Poulad A, Hosseinpour M, Najafi M, Ghasemi A.   +3 more
europepmc   +1 more source

A Fully-Differential Switched-Capacitor Dual-Slope Capacitance-To-Digital Converter (CDC) for a Capacitive Pressure Sensor. [PDF]

Sensors (Basel), 2019
Rogi C, Buffa C, De Milleri N, Gaggl R, Prefasi E.   +4 more
europepmc   +1 more source