Results 131 to 140 of about 767,182 (299)

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

open access: yesAdvanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen   +9 more
wiley   +1 more source

Reference Electrode‐Free Nitrate Sensing via Differential Temperature‐Modulated Potentiometry in Printed Symmetric SC‐ISEs

open access: yesAdvanced Electronic Materials, EarlyView.
This work proposes and validates a method for measuring nitrate concentration with printed, solid‐state ion‐selective electrodes that does not require a stable reference electrode. The approach uses brief, localized heating pulses to generate a concentration‐dependent voltage response that is drift‐resilient and log‐linear from 0.1 to 100 mm, while ...
Lucas Lahann   +2 more
wiley   +1 more source

MoS2 Memristors Made by Liquid–Liquid Interface Assembly and Ultraprecise Metal Printing

open access: yesAdvanced Electronic Materials, EarlyView.
A cleanroom‐free, fully additive fabrication route combines ultraprecise printed silver electrodes with Langmuir–Schaefer‐deposited bilayer MoS2 to realize ultralow‐power resistive switching devices. The resulting microscale memories exhibit low operating voltages, a large memory window, stable retention and endurance, demonstrating a scalable and cost‐
Miguel Franco   +13 more
wiley   +1 more source

An Extendable 17-Level Inverter With Suppressed Inrush Current and Reduced Component Count

open access: yesIEEE Access
This paper proposes a switched-capacitor-based 17-level inverter to reduce the number of components, limit inrush current, and minimize the components’ total standing voltage (TSV).
Majid Hosseinpour   +3 more
doaj   +1 more source

Understanding PSoC ® 1 Switched Capacitor Analog Blocks

open access: yes, 2014
CY8C24x23A,CY8C24x94 Software Version: PSoC ® Designer ™ 5.2 Related Application Notes: For a complete list of the application notes, click here. AN2041 explains the operation of PSoC ® 1's versatile switched capacitor analog blocks, and provides ...
Van Ess
core  

Dual‐Defect‐Engineered Zinc Oxynitride Thin‐Film Transistors Enabling Electrostatic Current Balancing in Geometrically Symmetric Oxide Logic

open access: yesAdvanced Electronic Materials, EarlyView.
Dual‐defect engineering controls subgap states in zinc oxynitride (ZnON) thin‐film transistors, yielding a field‐effect mobility of 26.58 cm2 V−1 s−1. A process‐associated threshold‐voltage shift is repurposed within a dual‐gate depletion‐mode load to electrostatically balance current in a geometrically symmetric NMOS inverter.
Seung Min Lee   +10 more
wiley   +1 more source

Low‐Voltage Operation of IGZO Memtransistors Enabled by Coupling Enhancement Through 2T Drain‐Driven Operation for Neuromorphic Computing

open access: yesAdvanced Intelligent Systems, EarlyView.
A two‐terminal IGZO memtransistor enabling low‐voltage operation is demonstrated through coupling enhancement. By utilizing drain‐induced Fowler–Nordheim tunneling, the device achieves programming below 10 V with a large memory window and high on/off ratio.
Junhyeong Park   +5 more
wiley   +1 more source

AI‐Powered Smart Displays and AR Glasses: Perspectives and Challenges

open access: yesAdvanced Intelligent Systems, EarlyView.
This perspective examines how AI is reshaping smart displays and AR glasses. The latest in image‐quality enhancement, sensor‐integrated display optimization, and physiological sensing in display systems, followed by AI‐assisted AR technologies including waveguide optimization, image compensation, foveated rendering, and multimodal sensing, is discussed.
Luke Benoit   +8 more
wiley   +1 more source

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