Results 161 to 170 of about 239,598 (305)

Hybrid Roll‐To‐Plate Printed CMOS Logic Circuits Via an Integrated Gravure‐Flexographic Printing Strategy

open access: yesAdvanced Materials Interfaces, EarlyView.
A layer‐specific hybrid gravure–flexographic printing strategy enables fully printed SWCNT thin‐film transistors and CMOS logic circuits on flexible substrates. Flexographic printing forms the thin gate and drain‐source electrodes with defined edges, whereas gravure printing forms the uniform dielectric, semiconductor, and doping layers. The integrated
Junfeng Sun   +4 more
wiley   +1 more source

A new single input common ground seven level triple boost switched capacitor based inverter. [PDF]

open access: yesSci Rep
Hosseinzadeh A   +4 more
europepmc   +1 more source

Liquid‐Crystal‐Based Reconfigurable Intelligent Surface for 7 GHz Mobile Communication

open access: yesAdvanced Materials Technologies, EarlyView.
The glass‐based liquid‐crystal reconfigurable intelligent surface (LC‐RIS) integrates active‐matrix driving and blind‐greedy phase optimization within a 5G‐NR OFDM framework. This enables continuously tunable and autonomous enhancement of wireless coverage. Leveraging the transparency and manufacturability of liquid crystal panels, it is ideally suited
Tien‐Lun Ting   +5 more
wiley   +1 more source

Toward Perception‐Native Electronic Skin: Bio‐Inspired In‐/Near‐Sensor and Neuromorphic Computing for Humanoid Robots

open access: yesAdvanced Materials Technologies, EarlyView.
Dense tactile streams from across the humanoid body converge on collide in a central wiring and data bottleneck. By relocating computation closer to and then into the skin itself, near‐ and in‐sensor architectures, together with neuromorphic computing, chart a path toward perception‐native electronic skin, in which the conversion of stimulus into ...
Mijin Kim   +6 more
wiley   +1 more source

Vertical Gate‐All‐Around SiGeSn/GeSn/SiGeSn Nanowire Transistors for Energy‐Efficient Electronics

open access: yesAdvanced Materials Technologies, EarlyView.
Band‐engineered SiGeSn/GeSn/SiGeSn heterostructures enable complementary vertical nanowire MOSFETs and steep slope tunnel FETs (TFETs) within a unified Group‐IV platform. Leakage suppression and tunnelling‐path engineering demonstrate an effective strategy for future low‐power and energy‐efficient integrated electronics.
Kenta Moto   +9 more
wiley   +1 more source

Terahertz Phase Inversion via Field‐Free Spin‐Orbit Torque Switching in an Antenna‐Integrated Spintronic Heterostructure

open access: yesAdvanced Optical Materials, EarlyView.
This work demonstrates fast electrical control of the phase of broadband terahertz pulses using a field‐free spintronic emitter. An antenna‐integrated Ta/CoFeB/Pt heterostructure switches its magnetization through spin‐orbit torque with 1 μs$\umu{\rm s}$ electrical pulses, producing complete π$\pi$‐phase inversion without external magnetic fields ...
Amir Khan   +6 more
wiley   +1 more source

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