Results 141 to 150 of about 423 (305)

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Symbol Parameter Conditions Min Typ Max Unit

open access: yes, 2010
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Symbol Parameter   +2 more
core  

Receptor‐Free Identification of Toxic Gases Enabled by Hygroscopic Aqueous Salt Films

open access: yesAdvanced Functional Materials, EarlyView.
Water as a gas sensor coating sounds impossible—until it stops evaporating. Here, hygroscopic salt solutions (LiCl, LiBr, H3PO4) form non‐drying aqueous films on CNT chemiresistors under ambient air. Gases partition into these liquid layers, sometimes transforming into water, and generate salt‐specific resistance fingerprints across a four‐channel ...
Seongwoo Lee   +5 more
wiley   +1 more source

Recent Progress of Switching Power Management for Triboelectric Nanogenerators. [PDF]

open access: yesSensors (Basel), 2022
Zhou H   +9 more
europepmc   +1 more source

Thermally Engineered Sodium‐Embedded Alumina with Programmable Synaptic Plasticity for Neuromorphic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon   +7 more
wiley   +1 more source

1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

open access: yes, 2010
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

core  

Multiplex Modular Nanorobotic Systems with Catalytic Activity under Magnetic Navigation

open access: yesAdvanced Functional Materials, EarlyView.
We present modular nanorobots composed of a magnetic propulsion module and different extension modules carrying functional activities, assembled via DNA base pairing. The system integrates propulsion, optical tracking, enzymatic catalysis, and cell docking in a programmable manner.
Voichita Mihali   +7 more
wiley   +1 more source

Symbol Parameter Conditions Min Typ Max Unit

open access: yes, 2009
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and
Quick Reference, General Description
core  

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min   +13 more
wiley   +1 more source

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