Results 1 to 10 of about 500,610 (274)
Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications [PDF]
Micromachines, 2021 Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates ...
Chao-Tsung Ma, Zhen-Huang Gu
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A new opportunity for the emerging tellurium semiconductor: making resistive switching devices [PDF]
Nature Communications, 2021 Resistive switching devices have great promise for a wide variety of technological applications. Here, Yang et al demonstrate that electrochemically induced tellurium filament can give rise to resistive switching, and show that devices based on this can ...
Yifei Yang +16 more
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Investigating unipolar switching in Niobium oxide resistive switches: Correlating quantized conductance and mechanism [PDF]
AIP Advances, 2018 Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in transition metal ...
Sweety Deswal, Ashok Kumar, Ajeet Kumar
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Известия высших учебных заведений и энергетических объединенний СНГ: Энергетика, 2021 The increase in the levels of short-circuit currents in the power system of the Republic of Belarus requires the study of the parameters of the electrodynamic stability of the main structural elements of electrical installations with flexible conductors.
Y. V. Potachits
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Mathematics, 2021 In the last years, the distribution network operators (DNOs) assumed transition strategies of the electric distribution networks (EDNs) towards the active areas of the microgrids where, regardless of the operating regimes, flexibility, economic ...
Gheorghe Grigoraș +4 more
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Overvoltages during switching operations of vacuum switching devices [PDF]
Zbornik Radova: Elektrotehnički Institut "Nikola Tesla", 2013 This paper presents the results of experimental studies of voltage phenomena in the switching operations of vacuum switching devices made by various manufacturers in several different configurations of 6 kV, 10 kV, 20 kV and 35 kV networks.
Vukelja Petar +3 more
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Noise-driven attractor switching device [PDF]
Physical Review E, 2009 9 pages, 2 tables, and 6 figures.
Asakawa, Naoki +4 more
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Three-terminal devices to examine single molecule conductance switching [PDF]
, 2006 We report electronic transport measurements of single-molecule transistor devices incorporating bipyridyl-dinitro oligophenylene-ethynylene dithiol (BPDN-DT), a molecule known to exhibit conductance switching in other measurement configurations.
Ciszek, J. W. +3 more
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Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air [PDF]
, 2014 An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices
Chang, Yao-Feng +6 more
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Известия высших учебных заведений: Проблемы энергетики, 2017 The article is devoted to evaluating the effectiveness of replacing installed in the workshop network of low-voltage switching devices for new in order to reduce electricity consumption in an industrial plant. The dynamics of change in the relative power
A. V. Shagidullin
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