Results 121 to 130 of about 500,610 (274)

Multi-Level Resistive Al/Ga₂O₃/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing. [PDF]

Nanomaterials (Basel), 2023
Wang LW, Huang CW, Lee KJ, Chu SY, Wang YH.   +4 more
europepmc   +1 more source

Fermi Surface Nesting and Anomalous Hall Effect in Magnetically Frustrated Mn2PdIn

Advanced Functional Materials, EarlyView.
Mn2PdIn, a frustrated inverse Heusler alloy, showing electronic‐structure driven anomalous Hall effect with Weyl crossings, Fermi‐surface nesting and near‐zero magnetization ideal for low‐magnetization spintronics. Abstract Noncollinear magnets with near‐zero net magnetization and nontrivial bulk electronic topology hold significant promise for ...
Afsar Ahmed, Arnab Bhattacharya, Prashant Singh, Ajay Kumar, Tukai Singha, Anis Biswas, Yaroslav Mudryk, I. Das   +7 more
wiley   +1 more source

Flexible Threshold-Type Switching Devices with Low Threshold and High Stability Based on Silkworm Hemolymph. [PDF]

Nanomaterials (Basel), 2022
Wang L, Yang J, Zhu H, Li W, Wen D.
europepmc   +1 more source

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

Advanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices. [PDF]

Micromachines (Basel), 2022
Aguirre FL, Suñé J, Miranda E.
europepmc   +1 more source

Universal In Situ Isotope Exchange Raman Spectroscopy (IERS) Methodology for Measuring Oxygen Surface Exchange Dynamics Using a Probe Layer

Advanced Functional Materials, EarlyView.
A bespoke multilayer thin film configuration has been designed, which overcomes the material dependency of conventional isotope exchange Raman spectroscopy (IERS). This universal IERS methodology is efficient, non‐destructive and provides additional structural information and time resolution, which can be further extended to various isotopic elements ...
Zonghao Shen, Francesco Chiabrera, Alexander Stangl, Laetitia Rapenne, Federico Baiutti, Carmen Jiménez, Albert Tarancón, Mónica Burriel   +7 more
wiley   +1 more source

Optical Tunability and Characterization of Mg-Al, Mg-Ti, and Mg-Ni Alloy Hydrides for Dynamic Color Switching Devices. [PDF]

ACS Appl Mater Interfaces, 2023
Palm KJ, Karahadian ME, Leite MS, Munday JN.   +3 more
europepmc   +1 more source

Complex Cryptographic and User‐Centric Physically Unclonable Functions Enabled by Strain‐Sensitive Nanocrystals via Selective Ligand Exchange

Advanced Functional Materials, EarlyView.
This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim, Hanseok Seo, Taesung Park, Byung Ku Jung, Junhyeok Park, Young Kyun Choi, Dae Yang Oh, Soong Ju Oh   +7 more
wiley   +1 more source

Electrically Tunable On‐Chip Topological Photonics with Integrated Carbon Nanotubes

Advanced Functional Materials, EarlyView.
This work demonstrates electrically tunable on‐chip topological THz devices by integrating 2D carbon nanotube (CNT) sheets with valley‐Hall photonic crystals, enabling broadband transmission modulation (71% modulation depth) and tunable narrowband filtering (0.54 GHz shift) through electrically induced thermal tuning. This advancement paves the way for
Jifan Yin, Wenhao Wang, Thomas Caiwei Tan, Abhishek Kumar, Ridong Jia, Nikhil Navaratna, Ranjan Singh, Lijuan Xie   +7 more
wiley   +1 more source

Engineering Spiking Neurons Using Threshold Switching Devices for High-Efficient Neuromorphic Computing. [PDF]

Front Neurosci, 2021
Ding Y, Zhang Y, Zhang X, Chen P, Zhang Z, Yang Y, Cheng L, Mu C, Wang M, Xiang D, Wu G, Zhou K, Yuan Z, Liu Q.   +13 more
europepmc   +1 more source