Results 141 to 150 of about 78,533 (267)
A 31 L multilevel inverter topology with less switching devices for hybrid electric vehicle applications. [PDF]
Saravanan K +4 more
europepmc +1 more source
Deciphering Small Molecule Diffusion Parameters Across Light Responsive Polymersome Membranes
Light‐responsive polymersomes bearing donor–acceptor Stenhouse adducts (DASAs) enable programmable control over small‐molecule transport across synthetic membranes. By systematically varying DASA density, an optimal functionalization regime is identified that maximizes light‐gated permeability.
Farzina Matubbar +7 more
wiley +1 more source
Mechanism for Local-Atomic Structure Changes in Chalcogenide-based Threshold-Switching Devices. [PDF]
Choi M +11 more
europepmc +1 more source
Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate. [PDF]
Choi Y, Shin J, Moon S, Shin C.
europepmc +1 more source
MAGTWIST: A compact magnetic rotary actuator, enabling smooth, stepless rotation, and on‐demand locking. Inspired by peristalsis, a soft polymer belt generates a traveling‐wave, enabling 270° rotation when heated. Cooling stiffens the belt, locking it in position and enabling it to withstand high loads.
Simon Frieler +3 more
wiley +1 more source
Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory. [PDF]
Gonzales C +3 more
europepmc +1 more source
A pixelation‐free, monolithic iontronic pressure sensor enables simultaneous pressure and position sensing over large areas. AC‐driven ion release generates spatially varying impedance pathways depending on the pressure. Machine learning algorithms effectively decouple overlapping pressure–position signals from the multichannel outputs, achieving high ...
Juhui Kim +10 more
wiley +1 more source
Resistive Switching Devices for Neuromorphic Computing: From Foundations to Chip Level Innovations. [PDF]
Udaya Mohanan K.
europepmc +1 more source
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim +3 more
wiley +1 more source

