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Switching in amorphous-silicon devices
Physical Review B, 1994The phenomena of nonvolatile switching in amorphous-hydrogenated-silicon thin-film devices are explained by a theory based on the presence of charged inclusions in the film, having originated from the initial forming treatments. The inclusions almost penetrate the film, and are able to move under applied fields of sufficient magnitude, and in a ...
, Jafar, , Haneman
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Sonic crystal acoustic switch device
The Journal of the Acoustical Society of America, 2013This study reports a wave-controlled sonic crystal switch device that exhibits a destructive interference-based wave to wave reverse switching effect. By applying control waves, this acoustic device, composed of a two-dimensional square lattice sonic crystal block, reduces acoustic wave transmission from input to output.
Serkan, Alagoz, Baris Baykant, Alagoz
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Q-Switches and external switching devices
1976The most important device to be discussed in this chapter is the laser Q-switch. This device, located inside the laser resonator, drastically changes the power and temporal characteristic of the beam obtained from a laser oscillator. Other switches employed outside the resonator include optical gates, which are used to select one pulse from a train of ...
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Switching Devices Based on Interlocked Molecules
Accounts of Chemical Research, 2001An architectural rationale and an experimental program aimed at the development of molecular electronics switching devices for memory and computing applications are discussed. Two-terminal molecular switch tunnel junctions are identified as the critical device components of molecular electronics-based circuitry.
Pease, Anthony R. +5 more
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Reset Switching Probability of Resistive Switching Devices
IEEE Electron Device Letters, 2011The reset switching probability of resistive switching devices is characterized in array testing. The measured switching probability can be quantitatively explained based on the mechanism of a thermally activated reset process. An analytical model of switching probability is developed to describe the dependence of reset probability on operation ...
null An Chen, null Ming-Ren Lin
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ECS Meeting Abstracts, 2013
Abstract not Available.
Sorin Cristoloveanu +3 more
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Abstract not Available.
Sorin Cristoloveanu +3 more
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1988
There is a very wide range and variety of semiconductor switching devices which can be considered for use in AC variable speed drives, and this chapter explains the principles, the capabilities and the performance characteristics of those devices which are most likely to be used for this purpose.
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There is a very wide range and variety of semiconductor switching devices which can be considered for use in AC variable speed drives, and this chapter explains the principles, the capabilities and the performance characteristics of those devices which are most likely to be used for this purpose.
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The 2010 International Power Electronics Conference - ECCE ASIA -, 2010
State-of-the-art device technologies of GaN power switching transistors are reviewed. The presented technologies solve the technical issues on GaN transistors for practical use replacing currently used Si-based power devices. Thick epitaxial growth over 6-inch Si substrates enables low cost fabrication of GaN devices with high breakdown voltages. A new
Masahiro Ishida +4 more
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State-of-the-art device technologies of GaN power switching transistors are reviewed. The presented technologies solve the technical issues on GaN transistors for practical use replacing currently used Si-based power devices. Thick epitaxial growth over 6-inch Si substrates enables low cost fabrication of GaN devices with high breakdown voltages. A new
Masahiro Ishida +4 more
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Switching control of resistive switching devices
Applied Physics Letters, 2010Switching current control plays a critical role in the operation of resistive switching devices. Both on-state resistance and maximum reset current show strong dependence on the current limit during set switching. The dependence in unipolar switching devices can be explained by the power-driven nature of reset and dynamic competition between set and ...
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Switching in amorphous devices
International Journal of Electronics, 1992Abstract Electrical switching of a kind can be observed in a great variety of materials in many different forms and structures. Much the most reproducible switching is observed, however, in small and geometrically well-defined devices fabricated from thin films of certain amorphous semiconductors. This paper is concerned with such devices.
A. E. OWEN +4 more
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