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Germanium power switching devices
IRE Transactions on Electron Devices, 1958Two-terminal and three-terminal germanium power switching devices have been developed, utilizing a metal semiconductor contact as an electron injector in a multijunction device. The principles of operation, fabrication techniques, and electrical characteristics of this new device are discussed. Devices capable of switching up to 25 amperes and blocking
J. Philips, H.C. Chang
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Switching Device Base on Power Electronic Switches
2020This paper represents the application of switching device in order to apply for the high voltage power electronics switches microcomputer assistant force exchanging gadget turn-on time is commonly 70ms ~ 80ms, when a few burdens are delicate and require short exchanging time that a couple of milliseconds or less, the microcomputer helper power ...
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1998
Ultrafast and wideband signal transmission and processing technologies are required for constructing future communications networks, and photonic switching technology is one of the most important research and development issues in the development of fully-optical communication networks where information will be carried by optical signals through nodes ...
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Ultrafast and wideband signal transmission and processing technologies are required for constructing future communications networks, and photonic switching technology is one of the most important research and development issues in the development of fully-optical communication networks where information will be carried by optical signals through nodes ...
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Devices for Photonic Switching
Photonic Switching, 1989State-of-the art devices for photonic switching are reviewed, emphasizing the time and space switching areas.
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2000
A description is given of an optical switching device (1) comprising a transparent substrate (3), a switching film (5) of a hydride compound of a trivalent transition or rare earth metal having a thickness of 300 nm, and a palladium capping layer (7) having a thickness of 30 nm. The capping layer is in contact with hydrogen. An electric current through
Broeder, F.J.A. den +6 more
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A description is given of an optical switching device (1) comprising a transparent substrate (3), a switching film (5) of a hydride compound of a trivalent transition or rare earth metal having a thickness of 300 nm, and a palladium capping layer (7) having a thickness of 30 nm. The capping layer is in contact with hydrogen. An electric current through
Broeder, F.J.A. den +6 more
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2015
Uz uvod na početku knjige, u kojem je ukazano na razlog nastanka i namjenu knjige te sadržaj, popis korištene literature popis pojmova i popis korištenih kratica na kraju, knjiga sadrži 11 poglavlja. U prvom poglavlju pojašnjava se pojam sklopni aparati, primjerom se prikazuje način podjele sklopnih aparata te daje kratak osvrt na ulogu sklopnih ...
Baus, Zoran +2 more
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Uz uvod na početku knjige, u kojem je ukazano na razlog nastanka i namjenu knjige te sadržaj, popis korištene literature popis pojmova i popis korištenih kratica na kraju, knjiga sadrži 11 poglavlja. U prvom poglavlju pojašnjava se pojam sklopni aparati, primjerom se prikazuje način podjele sklopnih aparata te daje kratak osvrt na ulogu sklopnih ...
Baus, Zoran +2 more
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Integrative oncology: Addressing the global challenges of cancer prevention and treatment
Ca-A Cancer Journal for Clinicians, 2022Jun J Mao,, Msce +2 more
exaly
2012
The device (1) has a contact lever (5) i.e. movable contact bridge, arranged in air gap of a magnetic circuit, so that an electro-dynamic force effect is guided during short circuit based on interaction of current flow with magnetic flux within the air gap.
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The device (1) has a contact lever (5) i.e. movable contact bridge, arranged in air gap of a magnetic circuit, so that an electro-dynamic force effect is guided during short circuit based on interaction of current flow with magnetic flux within the air gap.
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A hydrogen permeable optical reflective layer (4) of a transition metal is deposited on transition metal (hydride) i:::: layer (3) which can switch from a black absorbing state. A hydrogen permeable catalytic layer (5) of a transition metal is deposited 0 on top of the reflective layer (4).
Dam, B. +4 more
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Dam, B. +4 more
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1977
As already mentioned in Chapter 1 the term ‘thyristor’ is used for the family of semiconductor devices that exhibit bistable characteristics and can be switched on and off like the gas-tube thyratron. The SCR, which has been discussed in detail in Chapter 2, is a member of this family, and is widely used because of its large power-handling capacity ...
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As already mentioned in Chapter 1 the term ‘thyristor’ is used for the family of semiconductor devices that exhibit bistable characteristics and can be switched on and off like the gas-tube thyratron. The SCR, which has been discussed in detail in Chapter 2, is a member of this family, and is widely used because of its large power-handling capacity ...
openaire +1 more source