Results 231 to 240 of about 500,610 (274)

Phase-Changing Vanadium Oxides for Electromagnetic Radiation Management. [PDF]

Small Sci
Taha M, Daeneke T, Walia S.
europepmc   +1 more source

Phase Transitions and Switching Dynamics of Topological Domains in Hafnium Oxide-Based Cylindrical Ferroelectrics from Three-Dimensional Phase Field Simulation. [PDF]

Nanomaterials (Basel)
Chang P, Zhang H, Xie M, Zhang H, Xie Y.
europepmc   +1 more source

Fast prototyping of memristors for ReRAMs and neuromorphic computing.

Nanoscale
Marraccini G, Strangio S, Dimaggio E, Sargeni R, Pieri F, Sozen Y, Castellanos-Gomez A, Fiori G.   +7 more
europepmc   +1 more source

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A Nanofluidic Switching Device

Journal of the American Chemical Society, 2003
We present a nanofluidic switching function which allows directed transport in lipid bilayer nanotubes ( approximately 100 nm in diameter) between any two or several nanotube-connected vesicle containers (5-10 mum radius) in a large network. Liquid is transported in the form of small vesicular structures (10-15-10-18 L), and the transport direction is ...
Roger, Karlsson, Anders, Karlsson, Owe, Orwar   +2 more
openaire   +2 more sources

Nanoionics Switching Devices: “Atomic Switches”

MRS Bulletin, 2009
AbstractNovel nanoionics devices, atomic switches, have been developed using a solid-electrochemical reaction to control the formation and annihilation of the metal filament between two electrodes. The switching operation can be achieved simply by the application of a bias voltage to precipitate metal atoms in a nanogap between the two electrodes or to
Tsuyoshi Hasegawa, Kazuya Terabe, Toshitsugu Sakamoto, Masakazu Aono   +3 more
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Photonic switching devices

Optics News, 1988
Photonic switching devices are required to route or switch an optical signal without translating it first to an electrical signal. Their main attraction is in the ability to handle optical signals in a transparent way: the format and data are set by the network terminals.
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Switching in amorphous-silicon devices

Physical Review B, 1994
The phenomena of nonvolatile switching in amorphous-hydrogenated-silicon thin-film devices are explained by a theory based on the presence of charged inclusions in the film, having originated from the initial forming treatments. The inclusions almost penetrate the film, and are able to move under applied fields of sufficient magnitude, and in a ...
, Jafar, , Haneman
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Sonic crystal acoustic switch device

The Journal of the Acoustical Society of America, 2013
This study reports a wave-controlled sonic crystal switch device that exhibits a destructive interference-based wave to wave reverse switching effect. By applying control waves, this acoustic device, composed of a two-dimensional square lattice sonic crystal block, reduces acoustic wave transmission from input to output.
Serkan, Alagoz, Baris Baykant, Alagoz
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Q-Switches and external switching devices

1976
The most important device to be discussed in this chapter is the laser Q-switch. This device, located inside the laser resonator, drastically changes the power and temporal characteristic of the beam obtained from a laser oscillator. Other switches employed outside the resonator include optical gates, which are used to select one pulse from a train of ...
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