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Devices for Photonic Switching
Photonic Switching, 1989State-of-the art devices for photonic switching are reviewed, emphasizing the time and space switching areas.
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2000
A description is given of an optical switching device (1) comprising a transparent substrate (3), a switching film (5) of a hydride compound of a trivalent transition or rare earth metal having a thickness of 300 nm, and a palladium capping layer (7) having a thickness of 30 nm. The capping layer is in contact with hydrogen. An electric current through
Broeder, F.J.A. den +6 more
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A description is given of an optical switching device (1) comprising a transparent substrate (3), a switching film (5) of a hydride compound of a trivalent transition or rare earth metal having a thickness of 300 nm, and a palladium capping layer (7) having a thickness of 30 nm. The capping layer is in contact with hydrogen. An electric current through
Broeder, F.J.A. den +6 more
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2015
Uz uvod na početku knjige, u kojem je ukazano na razlog nastanka i namjenu knjige te sadržaj, popis korištene literature popis pojmova i popis korištenih kratica na kraju, knjiga sadrži 11 poglavlja. U prvom poglavlju pojašnjava se pojam sklopni aparati, primjerom se prikazuje način podjele sklopnih aparata te daje kratak osvrt na ulogu sklopnih ...
Baus, Zoran +2 more
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Uz uvod na početku knjige, u kojem je ukazano na razlog nastanka i namjenu knjige te sadržaj, popis korištene literature popis pojmova i popis korištenih kratica na kraju, knjiga sadrži 11 poglavlja. U prvom poglavlju pojašnjava se pojam sklopni aparati, primjerom se prikazuje način podjele sklopnih aparata te daje kratak osvrt na ulogu sklopnih ...
Baus, Zoran +2 more
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2012
The device (1) has a contact lever (5) i.e. movable contact bridge, arranged in air gap of a magnetic circuit, so that an electro-dynamic force effect is guided during short circuit based on interaction of current flow with magnetic flux within the air gap.
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The device (1) has a contact lever (5) i.e. movable contact bridge, arranged in air gap of a magnetic circuit, so that an electro-dynamic force effect is guided during short circuit based on interaction of current flow with magnetic flux within the air gap.
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A hydrogen permeable optical reflective layer (4) of a transition metal is deposited on transition metal (hydride) i:::: layer (3) which can switch from a black absorbing state. A hydrogen permeable catalytic layer (5) of a transition metal is deposited 0 on top of the reflective layer (4).
Dam, B. +4 more
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Dam, B. +4 more
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1977
As already mentioned in Chapter 1 the term ‘thyristor’ is used for the family of semiconductor devices that exhibit bistable characteristics and can be switched on and off like the gas-tube thyratron. The SCR, which has been discussed in detail in Chapter 2, is a member of this family, and is widely used because of its large power-handling capacity ...
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As already mentioned in Chapter 1 the term ‘thyristor’ is used for the family of semiconductor devices that exhibit bistable characteristics and can be switched on and off like the gas-tube thyratron. The SCR, which has been discussed in detail in Chapter 2, is a member of this family, and is widely used because of its large power-handling capacity ...
openaire +1 more source