Results 51 to 60 of about 500,610 (274)
Influence of rf sputter power on ZnO film characteristics for transparent memristor devices
AIP Advances, 2019 The impact of the radio-frequency (rf) sputtering power on the switching characteristics of ZnO-based transparent memristor devices has been investigated.
Firman Mangasa Simanjuntak +2 more
doaj +1 more source
Advanced Electronic Materials, 2020 This study demonstrates a synergistic approach of dual nanostructure engineering to improve the performance of AlOx‐based resistive random access memory (RRAM) devices.
Siddheswar Maikap, Writam Banerjee
doaj +1 more source
Screen‐Printed Flexible Piezoelectric Force Sensor Array with Electromagnetic Interference Shielding
Advanced Engineering Materials, EarlyView.This article introduces a flexible screen‐printed piezoelectric sensor array designed for low‐frequency healthcare applications such as tactile sensing and cardiovascular monitoring. The device integrates interface electronics enabling the simultaneous acquisition of up to 128 signals, along with flexible EMI shielding that significantly reduces noise ...
Joseph Faudou +6 more
wiley +1 more source
Analysis of SF6 and CF4 consumption for refueling high-voltage switching equipment
Известия высших учебных заведений: Проблемы энергетикиThe article describes to eliminate possible errors in the supply of cylinders with sulfur hexafluoride and cylinders with carbon tetrafluoride to high-voltage substations for refueling switching devices such as high-voltage switches, voltage transformers,
N. Yu. Zalenskaya +3 more
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Nematic liquid crystal devices with sub-millisecond response time [PDF]
, 2014 Conventional nematic liquid crystal devices exhibit switching times that are in the order of several milliseconds. In this work we focus on two types of nematic liquid crystals that can overcome the limitations of conventional nematic liquid crystals and
Beeckman, Jeroen +5 more
core
Influence of an Argon/Silane Atmosphere on the Temperature of a Thermal Plasma
Advanced Engineering Materials, EarlyView.The influence of a silane‐doped argon atmosphere on the chemical composition and temperature of a thermal nontransferring argon plasma is investigated using optical emission spectroscopy. As a result of the high amount of free electrons resulting from the stepwise ionization and dissociation of the silane molecule, even a silane addition of 0.01 vol ...
Lena Kreie +4 more
wiley +1 more source
Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices
Advances in Condensed Matter Physics, 2015 HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu +4 more
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Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device
Materials Research Express, 2021 In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics.
Lilan Zou, Jianmei Shao, Dinghua Bao
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Advanced Functional Materials, EarlyView.A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar +8 more
wiley +1 more source
Electronic switching circuit uses complementary non-linear components [PDF]
, 1972 Inherent switching properties of saturable inductors and storage diodes are combined to perform large variety of electronic functions, such as pulse shaping, gating, and multiplexing.
Zucker, O. S.
core +1 more source