The Role of Polymers in Halide Perovskite Resistive Switching Devices. [PDF]
Thien GSH, Chan KY, Marlinda AR.
europepmc +1 more source
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter +4 more
wiley +1 more source
The Effect of Power MOSFET Materials on their Switching Performance
Power semiconductor devices have a great impact on the modern society electronic system applications. The study aims to improve the switching performance of power MOSFET devices based on materials with different bandgap structures and technologies.
Asmaa S. Ibrahim +3 more
doaj +1 more source
Electrical Characteristics of CMOS-Compatible SiOx-Based Resistive-Switching Devices. [PDF]
Koryazhkina MN +13 more
europepmc +1 more source
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications. [PDF]
Kundale SS +11 more
europepmc +1 more source
Rational halogen mixing strategy was employed to shift the bandgap of Cs2PbBr2I2 from ultraviolet to visible region, enabling first realization of a visible‐light photodetector with this 2D layered Ruddlesden‐Popper perovskite material. Under illumination, light‐induced internal field forms and drives trap‐mediated persistent photoconductivity ...
Md Fahim Al Fattah +11 more
wiley +1 more source
Thermal contribution to current-driven antiferromagnetic-order switching
In information technology devices, current-driven state switching is crucial in various disciplines including spintronics, where the contribution of heating to the switching mechanism plays an inevitable role.
Myoung-Woo Yoo +3 more
doaj +1 more source
Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices. [PDF]
Lee SY, Seo HK, Jeong SY, Yang MK.
europepmc +1 more source
Broadband, Flexible, Skin‐Compatible Carbon Dots/Graphene Photodetectors for Wearable Applications
Broadband, flexible photodetectors integrating nitrogen‐rich carbon dots with single‐layer graphene on plastic substrates are demonstrated. A biocompatible chitosan–glycerol electrolyte enables efficient low‐voltage gating and on‐skin operation. The devices exhibit ultraviolet‐to‐near‐infrared response, mechanical robustness under bending, and verified
Nouha Loudhaief +20 more
wiley +1 more source

