Results 81 to 90 of about 500,610 (274)

2D Multifunctional Spin‐Orbit Coupled Dirac Nodal Line Materials

open access: yesAdvanced Functional Materials, EarlyView.
A total of 473 nonmagnetic and antiferromagnetic 2D spin‐orbit coupled Dirac nodal line materials are screened, spanning 5 layer groups and 12 magnetic space groups. Furthermore, it integrates their topological properties with electride, multiferroic, and magnetic characteristics, revealing unique systems with expanded functionalities and promising ...
Weizhen Meng   +7 more
wiley   +1 more source

Planar approximation for spin transfer systems with application to tilted polarizer devices

open access: yes, 2011
Planar spin-transfer devices with dominating easy-plane anisotropy can be described by an effective one-dimensional equation for the in-plane angle. Such a description provides an intuitive qualitative understanding of the magnetic dynamics.
Bazaliy, Ya. B.
core   +1 more source

Micropatterned Biphasic Printed Electrodes for High‐Fidelity on‐Skin Bioelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Micropatterned biphasic printed electrodes achieve unprecedented skin conformity and low impedance by combining liquid‐metal droplets with microstructured 3D lattices. This scalable approach enables high‐fidelity detection of ECG, EMG, and EEG signals, including alpha rhythms from the forehead, with long‐term comfort and stability.
Manuel Reis Carneiro   +4 more
wiley   +1 more source

Spin-orbit torque in completely compensated synthetic antiferromagnet

open access: yes, 2018
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability.
Liao, L. Y.   +7 more
core   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

open access: yesAdvanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp   +7 more
wiley   +1 more source

Non-isolated resonant link DC–DC converter for use with GaN devices

open access: yesThe Journal of Engineering, 2019
As new wide band-gap (WBG) devices are developed and improved, new topologies and control schemes are required to take advantage of the ultra-fast switching turn on/off speeds that are now available, without the limitations of switching losses and ...
Maria Orr   +2 more
doaj   +1 more source

Electrical switching of antiferromagnetic Mn$_2$Au and the role of thermal activation

open access: yes, 2018
Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the ultrafast dynamics at ...
Graulich, Dominik   +2 more
core   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

open access: yesAdvanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco   +8 more
wiley   +1 more source

Technical Analysis of Transition Switching Engineering in Urban Rail Transit Signaling System Upgrades

open access: yesChengshi guidao jiaotong yanjiu
[Objective] As urban rail transit lines in many major cities across China have entered the system upgrade stage, it is crucial to ensure the safety, reliability, and efficiency of transition switching engineering during the upgrade process, which will ...
YE Fuzhi   +5 more
doaj   +1 more source

Interfacial layer assisted, forming free, and reliable bipolar resistive switching in solution processed BiFeO3 thin films

open access: yesAIP Advances, 2020
BiFeO3 based resistive random access memory (RRAM) devices are fabricated using a low-cost solution process to study the effect of an Al top electrode on switching behavior and reliability.
Chandni Kumari   +3 more
doaj   +1 more source

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