Results 171 to 180 of about 46,059 (265)

Short and Length‐Independent Group Delay Supported by Topological Edge States in Finite‐Size Su–Schrieffer–Heeger Chains

open access: yesAdvanced Materials Technologies, EarlyView.
This study demonstrates short, length‐independent group delay supported by topological edge states in open Su–Schrieffer–Heeger networks. Strong boundary port coupling enables an order‐of‐magnitude latency reduction compared to bulk modes, alongside robust protection against bulk disorder.
Yu‐Han Chang   +11 more
wiley   +1 more source

Challenges and opportunities in clinical field research: A Bourdieusian analysis of Fiocruz's experience in Brazil. [PDF]

open access: yesPLoS One
Diniz RC   +8 more
europepmc   +1 more source

Highly Conductive and Transparent Coatings via Low‐Temperature Hydroiodic Acid Vapor Treatment of Oxo‐Graphene Thin Films

open access: yesAdvanced Materials Technologies, EarlyView.
The double self‐assembly (DSA) method applied to oxo‐graphene (oxo‐G) flakes followed by hydroiodic acid (HI) vapor treatment and low‐temperature annealing yields highly conductive, optically transparent thin films with the potential for applications in electronic and optoelectronic devices.
Arindam Konar   +13 more
wiley   +1 more source

3D‐Printed Actuator Powered by Liquid Crystal Elastomer Muscles at the Water–Air Interface

open access: yesAdvanced Materials Technologies, EarlyView.
Soft robots for unstructured environments require responsive, durable actuators. Liquid crystal elastomers (LCEs) provide large reversible deformations under thermal or optical stimuli. Direct ink writing enables fabrication of LCE actuators integrated with silicone, with mesogen chemistry and oligomers optimized for printable inks.
Cecilie Ryberg   +5 more
wiley   +1 more source

Vertical Gate‐All‐Around SiGeSn/GeSn/SiGeSn Nanowire Transistors for Energy‐Efficient Electronics

open access: yesAdvanced Materials Technologies, EarlyView.
Band‐engineered SiGeSn/GeSn/SiGeSn heterostructures enable complementary vertical nanowire MOSFETs and steep slope tunnel FETs (TFETs) within a unified Group‐IV platform. Leakage suppression and tunnelling‐path engineering demonstrate an effective strategy for future low‐power and energy‐efficient integrated electronics.
Kenta Moto   +9 more
wiley   +1 more source

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