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Unveiling the Hidden Geometry of OECTs: Contact‐Semiconductor Overlap Driven Errors in Volumetric Capacitance

open access: yesAdvanced Materials Technologies, EarlyView.
This work examines how contact–semiconductor overlap influences volumetric capacitance extraction in organic electrochemical transistors as device dimensions shrink. It shows that neglecting overlap leads to systematic, geometry‐driven errors in capacitance values.
Renan Colucci   +7 more
wiley   +1 more source

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