Results 201 to 210 of about 244,094 (312)

Morphological symmetry-aware generalized policy network for deep reinforcement learning. [PDF]

open access: yesFront Robot AI
Hakoda R   +6 more
europepmc   +1 more source

Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina

open access: yesAdvanced Functional Materials, EarlyView.
Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand   +5 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Critical point-based wireless sensors enabling tiny perturbation detection. [PDF]

open access: yesSci Adv
Ma C   +13 more
europepmc   +1 more source

TABLES OF SYMMETRIC FUNCTIONS—ERRATA [PDF]

open access: yesBiometrika, 1958
David, F. N., Kendall, M. G.
openaire   +1 more source

Emergent Topological Magnons and Thermal Hall Effect in 2D Filling‐Enforced Fully Compensated Ferrimagnets

open access: yesAdvanced Functional Materials, EarlyView.
Schematic illustration of ferroelectric‐intercalation‐driven transitions in magnetic configurations and magnonic topological phases, together with the symmetry relations of magnonic Berry curvature. ABSTRACT Magnons in collinear magnets with vanishing net magnetization offer unique advantages for spin transport, including ultrafast dynamics and ...
Yingxi Bai   +8 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Kahler maps of Hermitian symmetric spaces into complex space forms [PDF]

open access: yes, 2007
A. LOI, Loi, A., Di Scala, Antonio Jose'
core  

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