Results 221 to 230 of about 189,179 (323)

NEURD offers automated proofreading and feature extraction for connectomics. [PDF]

open access: yesNature
Celii B   +57 more
europepmc   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

open access: yesAdvanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu   +4 more
wiley   +1 more source

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels

open access: yesAdvanced Electronic Materials, EarlyView.
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang   +8 more
wiley   +1 more source

A Blending Approach for Dual Surface and Bulk Functionality in Organic Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Dual‐mode organic transistor, combining Electrolyte‐Gated Organic Field‐Effect Transistor (EGOFET) and Organic Electrochemical Transistor (OECT) functionalities, is achieved by blending p‐type semiconducting polymer and n‐type mixed conducting fullerene.
Sasha Simotko   +2 more
wiley   +1 more source

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