Results 221 to 230 of about 352,422 (329)

Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy

open access: yesAdvanced Electronic Materials, EarlyView.
Steady‐state and transient photocapacity studies, conducted with light at various wavelengths in the UVC, UVB, and UVA ranges, enable the study of acceptor traps, such as gallium vacancies and their complexes with hydrogen. These investigations allow the determination of spatial profiles and the measurement of response times to light on and off ...
Payam Rajabi Kalvani   +12 more
wiley   +1 more source

Cerebellar basket cell filtering of Purkinje cell responses elicited by low frequency parallel fibre transmission. [PDF]

open access: yesSci Rep
Masoli S   +6 more
europepmc   +1 more source

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels

open access: yesAdvanced Electronic Materials, EarlyView.
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang   +8 more
wiley   +1 more source

Evidence for trans-synaptic propagation of oligomeric tau in human progressive supranuclear palsy. [PDF]

open access: yesNat Neurosci
McGeachan RI   +22 more
europepmc   +1 more source

A Blending Approach for Dual Surface and Bulk Functionality in Organic Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Dual‐mode organic transistor, combining Electrolyte‐Gated Organic Field‐Effect Transistor (EGOFET) and Organic Electrochemical Transistor (OECT) functionalities, is achieved by blending p‐type semiconducting polymer and n‐type mixed conducting fullerene.
Sasha Simotko   +2 more
wiley   +1 more source

Million‐Atom Simulation of the Set Process in Phase Change Memories at the Real Device Scale

open access: yesAdvanced Electronic Materials, EarlyView.
Multimillion atom simulations reveal the subtle interplay between crystal nucleation and crystal growth from the crystal/amorphous rim in phase change memories based on the Ge2Sb2Te5 prototypical compound, at the length and time scales of the set process in the real devices.
Omar Abou El Kheir, Marco Bernasconi
wiley   +1 more source

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