Results 131 to 140 of about 65,565 (224)
Single-photon counting detectors for diffraction-limited light sources
Frontiers in PhysicsWhen first introduced, single-photon counting detectors reshaped crystallography at synchrotrons. Their fast readout speed enabled, for example, shutter-less data collection and fine slicing of the rotation angle and boosted the development of new ...
Erik Fröjdh +2 more
doaj +1 more source
Tailoring of Creep Regime Domain Wall Dynamics in Perpendicularly Magnetized Pd/Co/Pd Trilayers
Advanced Materials Interfaces, EarlyView.Understanding magnetic domain wall (DW) dynamics is vital for improving the performance of heavy‐metal/ferromagnet‐based spintronic devices. This work manifests a fundamental investigation encompassing structural properties and magnetic DW motion in Pd/Co/Pd multilayers having perpendicular magnetic anisotropy.
Anurag Keloth +8 more
wiley +1 more source
Advanced Materials Interfaces, EarlyView.Spray‐depositon of bulky organic cations salts on top of 3D perovskite layers lead to formation of 2D/3D perovskite heterostructurs with 2D perovskite compositions (PEA)2FAPb2I7, (TMA)2PbI4, (CMA)2FAPb2I7, and (DDA)2FAPb2I7, respectively. Extensive characterization, including X‐ray diffraction and grazing incidence wide‐angle X‐ray scattering, confirms
Rishabh Sahani +12 more
wiley +1 more source
Exploring the Most Extreme Gamma-Ray Blazars Using Broadband Spectral Energy Distributions [PDF]
arXivExtreme high-synchrotron peaked blazars (EHSPs) are rare high-energy sources characterised by synchrotron peaks beyond 10$^{17}$ Hz in their spectral energy distributions (SEDs). Their extreme properties challenge conventional blazar emission models and provide a unique opportunity to test the limits of particle acceleration and emission mechanisms in ...
arxiv
Advanced Materials Interfaces, EarlyView.This study demonstrates that tailoring surface ─OH groups on SiO2 and SiNx via dry etching significantly enhances the selectivity of DMATMS adsorption, achieving a 92.2% selectivity in subsequent Ru layer growth. In situ spectroscopy reveals that removal of ─OH groups reduce DMATMS reactivity on SiNx but not on SiO2, providing insights for improving ...
Eunji Sim +9 more
wiley +1 more source
Advanced Materials Interfaces, EarlyView.A novel and efficient method is explored to synthesize 1D single‐crystal sub‐stoichiometric WnO3n‐2 (n = 25) nanowire bundles. The approach utilizes selective low‐energy He+ ion irradiation (27 eV) on Mo‐Ni doped WOx surface, achieving efficient catalyst‐free self‐organized growth of high aspect ratio nanowires at the temperature of 700 °C.
Maryna Bilokur +3 more
wiley +1 more source
Ferrite Measurements for Synchrotron RF Accelerating System Design [PDF]
, 1965 Q. Kerns, G. Tool, Joseph E. Katz
openalex +1 more source
Advanced Materials Interfaces, EarlyView.By doping the elements with different numbers of valence electrons (Al3+ and Sn4+ ions) into the ZnO matrix, device conversion efficiencies of 8.69% and 9.21%, respectively, are achieved. The ultrafast time‐resolved studies show that the elevated carrier concentration in Sn‐doped ZnO, in comparison with Al‐doped ZnO and un‐doped ZnO, plays a ...
Anusha Puliparambil Thilakan +10 more
wiley +1 more source