Results 241 to 250 of about 32,519,136 (357)

Soft Electromagnetic Actuator and Oscillator

open access: yesAdvanced Materials Technologies, Volume 10, Issue 6, March 18, 2025.
This work presents a groundbreaking soft electromagnetic system capable of bistable actuation and self‐regulated oscillation. Using liquid metal and silicone as a compliant conductor, the actuator enables force generation, sensing, and feedback with minimal power.
Noah D. Kohls, Yi Chen Mazumdar
wiley   +1 more source

Printed Interconnects for Heterogeneous Systems Integration on Flexible Substrates

open access: yesAdvanced Materials Technologies, Volume 10, Issue 6, March 18, 2025.
Key components (sensors, energy devices, communication devices, computing chips, and interconnects) of flexible hybrid electronic (FHE) system connected via conductive printed metal tracks. The figure in the insets shows out‐of‐plane printed interconnects providing opportunities for lithography‐free formation of VIAs, in‐plane access of UTCs pads, and ...
Abhishek Singh Dahiya   +3 more
wiley   +1 more source

AI‐Enhanced Gait Analysis Insole with Self‐Powered Triboelectric Sensors for Flatfoot Condition Detection

open access: yesAdvanced Materials Technologies, Volume 10, Issue 6, March 18, 2025.
The given research presents an innovative insole‐based device employing self‐powered triboelectric nanogenerators (TENG) for flatfoot detection. By integrating TENG tactile sensors within an insole, the device converts mechanical energy from foot movements to electrical signals analyzed via machine learning, achieving an 82% accuracy rate in flatfoot ...
Moldir Issabek   +7 more
wiley   +1 more source

Room Temperature Rejuvenation Technology for Irradiated Gallium Nitride Transistors

open access: yesAdvanced Materials Technologies, EarlyView.
High temperature annealing has been the main defect mitigation technology since the Bronze age. We propose a room temperatureannealing technique that could be effective for electrically conducting materials. The new technique is demonstrated on a Gallium Nitride high electron mobility transistor undergoing radiation damage.
Md Hafijur Rahman   +6 more
wiley   +1 more source

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