Results 181 to 190 of about 155,497 (297)
Shellular materials form spontaneously by dip coating the primitive triply periodic minimal surface (TPMS) wireframe in an aqueous solution of lyotropic liquid crystalline graphene oxide (GO) nanosheets mixed with polymers. Regulated by surface tension, GO nanosheets align on the polymer soap film as the stress builds up during drying.
Yinding Chi +9 more
wiley +1 more source
Electromyography does not show adequate effectiveness in diagnosis of suprascapular nerve lesions caused by rotator cuff tear in rat model. [PDF]
Guo Y +6 more
europepmc +1 more source
Buckling‐resistant and trace‐stacked (BRATS) intracortical microelectrode arrays (MEAs) eliminate the need for insertion aid and complex surgical setup, resulting in minimal inflammatory tissue response, compared to conventional flexible MEAs inserted with aid. Trace stacking effectively doubled the channel count without increasing the MEA shank width,
May Yoon Pwint, Delin Shi, X. Tracy Cui
wiley +1 more source
A review of finite element modeling and surgical simulation of meniscal tear in knee joint: progress and challenges. [PDF]
Yu C +12 more
europepmc +1 more source
A Mid-Term Reults of Arthroscopic Versus Open Repair for Large and Massive Rotator Cuff Tears [PDF]
Seong Il Wang, Jong Hyuk Park
openalex +1 more source
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu +12 more
wiley +1 more source
Minimal Stiffness After Rotator Cuff Repair With Bioinductive Collagen Implants. [PDF]
Bushnell BD +5 more
europepmc +1 more source
Revolution in Mexico: Tears of Upheaval, 1910-1940 [PDF]
Michael C. Meyer
openalex +1 more source
Enhanced Performance and In Situ TEM Investigation in High Entropy Alloy Electrode Based Memristors
This study utilizes in situ TEM, EDS, EELS, and APT to reveal switching in HEA/ZnO/Nb:STO RRAM. High diffusivity of Mn lowers the SET voltage to 1.5 V. Cr stabilizes the oxygen layer, while Fe, Co, and Ni stabilize the electrode. Based on these observations, the device achieves 30 ns switching, a 10⁷ memory window, and excellent endurance, being ...
Jing‐Yuan Tsai +10 more
wiley +1 more source

