Results 111 to 120 of about 162 (156)

TiO6 as a Compensatory Structural Unit in Co‐Free, High‐Ni Layered Oxide for Durable Lithium‐Ion Batteries

Advanced Science, EarlyView.
Ti substitution stabilizes Co‐free high‐Ni layered oxides through both structural and electronic effects. TiO6 octahedra act as compensatory structural units that help interrupt cooperative Jahn–Teller distortion and suppress detrimental phase transitions, while the electron‐withdrawing inductive effect of Ti stabilizes the oxygen lattice. As a result,
Bixian Ying, Zhenjie Teng, Jun Wang, Honghong Tian, Charlotte von Petersdorff‐Campen, Rommel T. Tolla, Iuliia Mikulska, Linus Voigt, Sascha Nowak, Verena Naber, Alexander Schökel, Yuanming Liu, Michael Merz, Peter Nagel, Stefan Schuppler, Katja Frenzel, Adrian Jonas, Lena Mathies, Martin Winter, Karin Kleiner   +19 more
wiley   +1 more source

Beyond PEG: Emerging Polymer Lipid Alternatives for Lipid Nanoparticle (LNP) Formulations

Advanced Science, EarlyView.
This review discusses recent advances in PEG‐alternative LNP designs, including non‐PEG polymers, zwitterionic lipids, and polypeptides. It evaluates how surface‐engineering chemistry influences LNP formation and biological behavior, and highlights current limitations and opportunities of PEG‐alternative LNPs.
Zihnil A. I. Mazrad, Yi Ju, Stephen J. Kent, Colin W. Pouton, Kristian Kempe   +4 more
wiley   +1 more source

Analog Synaptic Plasticity in 2D Layered Material Iontronic Memtransistors for Brain‐Inspired Computing

Advanced Science, EarlyView.
In this work, we demonstrated a robust 2D MoS2 based iontronic memtransistor of planar architecture operated under the influence of an electrical double layer with versatile performance and applications, including pinched hysteresis nature of transfer curve, analogue channel conductance tuning, low‐voltage operation, logic‐gate operation, classical ...
Puranjay Saha, Saptarshi Bej, Bikas C. Das   +2 more
wiley   +1 more source

Light‐Absorbing‐Layer‐Free Flash Lamp Annealing for High‐Throughput Fabrication of All‐Solution‐Processed Oxide Electronics

Advanced Science, EarlyView.
A flash lamp annealing strategy using a mullite chuck enables rapid conversion of sol–gels to metal oxides on silicon and ultra‐thin glass without extra light‐absorbing layers. Direct light absorption initiates the transformation, and the low thermal conductivity of mullite promotes heat accumulation.
Zetong Li, Wei He, Guangji Wang, Jingwei Zhang, Zhimin Chai, Xinchun Lu   +5 more
wiley   +1 more source

Operando Visualization of Cathode Water Management in Proton Exchange Membrane Water Electrolyzers Using Synchrotron X‐Ray Radiography

Advanced Science, EarlyView.
The cathode of proton exchange membrane water electrolyzers remains a poorly understood region despite its importance for hydrogen purity and operational safety. Operando synchrotron X‐ray radiography directly visualizes liquid water behavior and uncovers a transition from continuous to pulsating transport, providing new insight into multiphase ...
Wataru Yoshimune, Tetsuichiro Hayakawa, Yuta Miyase   +2 more
wiley   +1 more source

Revealing the Underlying Mechanisms in Performance Enhancement of Shellular Lattice Electrodes During Anion Exchange Membrane Water Electrolysis Process

Advanced Science, EarlyView.
Micro laser powder bed fusion enables architected nickel shellular lattice gas diffusion layers for anion exchange membrane water electrolysis. Among regular open cell geometries, the Gyroid lattice promotes bubble release, convective reactant replenishment and continuous electron transport, delivering low overpotentials, enhanced charge transfer and ...
Tianxiao Niu, Rui Li, Xiao Chen, Deyong Sun, Tianyu Gao, Junhao Ding, Shuo Qu, Xu Song   +7 more
wiley   +1 more source

Wafer‐Scale 3D Integration for High‐Density Multi‐Valued Neuromorphic Logic

Advanced Science, EarlyView.
Wafer‐scale 3D vertically integrated multi‐valued logic (MVL) circuits are realized by monolithically integrating a Te/IGZO heterojunction FET with an engineered Te pull‐up FET. Heterointerface‐mediated transport and optimized current matching enable stable ternary operation, while vertical stacking reduces circuit footprint and interconnect complexity,
Chang‐Hyeon Kim, Min Seok Kim, Joong Bum Rhim, Tae In Kim, Hyuck‐In Kwon, Ick‐Joon Park   +5 more
wiley   +1 more source

Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A straightforward method is introduced to produce ion‐gel films with very low surface roughness by employing a solution‐shearing coating process. These ion‐gel films permit the growth of crystalline thin films of various small molecule organic semiconductor molecules directly on top of the ion‐gel layer, thereby enabling “inverted” small molecule ...
Jonathan Perez Andrade, Angelika Wrzesińska‐Lashkova, Anupam Prasoon, Felix Talnack, Katherina Haase, Bernd Büchner, Xinliang Feng, Yana Vaynzof, Mike Hambsch, Yulia Krupskaya, Stefan C. B. Mannsfeld   +10 more
wiley   +1 more source

All‐Solution‐Processed Perovskite Light‐Emitting Transistors Enabled by a Fully Organic Architecture

Advanced Electronic Materials, EarlyView.
Fully solution‐processed light‐emitting transistors based on CsPbBr3 perovskite nanocrystals (Pe‐LETs) are demonstrated using an all‐organic platform. By optimizing film formation and device integration, the Pe‐LETs achieve bright green emission with excellent color purity and a peak external quantum efficiency of 4.17 × 10−3 %, marking a step forward ...
Kelment Zahoaliaj, Alice Fappani, Francesca Pallini, Valentina Bellotti, Nicolò Quaresima, Margherita Bolognesi, Mario Prosa, Luca Beverina, Stefano Toffanin   +8 more
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source