Results 41 to 50 of about 4,362,785 (247)

Energy-Saving Technology in Finite Element Calculation

Journal of Physics: Conference Series, 2021
Abstract In the finite element calculation of three-dimensional impact mechanics, there are usually such problems as large memory consumption and more machine consumption, which leads to a great waste of power resources. Based on the analysis of the calculation process of three-dimensional penetration sliding surface, a method of ...
Feng Wang, Qianwen Han, Yurong Ma, Yaqiong Jiang, Dan Li, Wei Zhou   +5 more
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Regularities of change of energy indicators of the basic technological equipment of the cotton-cleaning industry

Journal of Physics: Conference Series, 2019
The article discusses the change in electrical loads and specific power consumption during the processing of various varieties of raw cotton. A method of evaluation changes in energy indicators and the influence of normative factors and identifying ...
I. U. Rakhmonov, K. Reymov
semanticscholar   +1 more source

Architectural choices for the Columbia 0.8 Teraflops machine

, 1994
We discuss the hardware design choices made in our 16K-node 0.8 Teraflops supercomputer project, a machine architecture optimized for full QCD calculations.
Airiau, Arsenin, Baker, Higgins, I.V. Arsenin   +4 more
core   +1 more source

Calculations Using Quantum Chemistry for Inorganic Molecule Simulation BeLi 2 SeSi

, 2017
Inorganic crystals have been used in the most diverse electronic systems since the nineteenth century, which apply to the wide variety of technological applications, which are the quartz crystals are the most used.
R. Gobato, A. Heidari
semanticscholar   +1 more source

Design development of machine shop area for the case TSF-8.171.137 manufacture including the study of cutting tool geometrical parameters influence on cutting force parameters [PDF]

, 2019
The thesis develops the design of machine shop area for manufacturing the case and researching the impact of cutting tool geometrical parameters on cutting force components and tool lifeCONTENTS INTRODUCTION 1. ANALYTIC CHAPTER 1.1.
Duhair, Yousif, Духаір, Юсіф
core  

Inverse Magnetoresistance of Molecular Junctions

, 2005
We present calculations of spin-dependent electron transport through single organic molecules bridging pairs of iron nanocontacts. We predict the magnetoresistance of these systems to switch from positive to negative with increasing applied bias for both
D. A. Papaconstantopoulos, George Kirczenow, Hugh Dalgleish, M. Julliére, S. Datta, S. P. McGlynn, Z. H. Xiong   +6 more
core   +1 more source

Grid-Technology for Chemical Reactions Calculation [PDF]

, 2005
We discuss a possible strategy for implementing a grid-based approach to realizing the immense computational resources required to compute reactive molecular scattering cross sections and rate constants.
Balint-Kurti, GG, Bogdanov, A, Gevorkyan, A, Gorbachev, Y, Hakobyan, T, Nyman, G, Shoshmina, I, Stankova, E   +7 more
openaire   +1 more source

Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material [PDF]

Science, 2016
Making a large-gap topological insulator Although of interest to basic research, topological insulators (TIs) have not yet lived up to their technological potential.
F. Reis, Gang Li, L. Dudy, M. Bauernfeind, S. Glass, W. Hanke, R. Thomale, J. Schäfer, R. Claessen   +8 more
semanticscholar   +1 more source

A fourfold coordinated point defect in silicon

, 2002
Due to their technological importance, point defects in silicon are among the best studied physical systems. The experimental examination of point defects buried in bulk is difficult and evidence for the various defects usually indirect.
A. Antonelli, F. Cargoni, F. Wooten, G. Bachelet, G. Baraff, G. Watkins, J. Doye, J. Perdew, K. Pandey, Luc Billard, M. Payne, M. Puska, N. Marzari, P. Blöchl, P. Pulay, R. Car, R. Needs, S. Clark, S. Goedecker, Stefan Goedecker, T. Lenosky, Thierry Deutsch, W. Lee, W. Leung, Y. Bar-Yam   +24 more
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Unintentional high density p-type modulation doping of a GaAs/AlAs core-multi-shell nanowire [PDF]

, 2014
Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms.
A. Bertoni, A. Kretinin, A. Mitioglu, Adachi S., Algra R. E., Assali S., Bertoni A., Bimberg D., Borghs G., Butov L. V., Casadei A., Cui Y., Cui Y., D. K. Maude, Duan X., Dufouleur J., Estrin Y., Ferreira A. C., Fickenscher M., Fishman G., Fontcuberta i Morral A., Funk S., G. Goldoni, Glasberg S., Gunnarsson O., Hadas Shtrikman, Harper P. G., Heiss M., Hilse M., Hocevar M., Hu J., I. Breslavetz, J. Jadczak, Jahn U., Klitzing K. v., Krogstrup P., Kunzel H., Levinshtein M., Lieber C. M., Lu W., M. Royo, Meynadier M. H., Musin I. R., P. Kossacki, P. Plochocka, Pashley M. D., Pavesi L., Petroff P. M., Pistol M.-E., Plochocka P., Royo M., Rudolph D., Sager D., Shtrikman H., Shtrikman H., Skolnick M. S., Spirkoska D., Spirkoska D., T. Smolenski, Tans S. J., Thelander C., Titova L. V., Tokumitsu E., Tsui D. C., Walck S. N.   +64 more
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