Results 211 to 220 of about 507,314 (399)
To address the tradeoff between synaptic linearity and operating speed, a Cu ion‐based ultrathin electrochemical random‐access memory is engineered using a 1.2 nm AlOx liner and 5 nm HfOx layer. The device exhibits fast and uniform weight updates under 50 μs pulses, along with long retention and high endurance, paving the way for robust synaptic units ...
Seonuk Jeon+3 more
wiley +1 more source
Intelligent Agents in Telecommunication Networks [PDF]
Leen‐Kiat Soh, Costas Tsatsoulis
openalex +1 more source
Unveiling the Influence of Annealing Temperature on Properties of CZTSSe Nanocrystals
This study investigates the synthesis and annealing temperature effects on CZTSSe nanopowders for photoelectrochemical water splitting. Using solution‐based methods, the research explores how temperatures from 100 to 350 °C influence morphology, structure, and optical properties. Findings reveal temperature‐dependent grain growth and structural changes,
Akin Olaleru+5 more
wiley +1 more source
Author Correction: Reconfigurable biconcave lens antenna based on plasma technology. [PDF]
Sadeghikia F+4 more
europepmc +1 more source
Telecommunication devices use, screen time and sleep in adolescents
Alba Cabré-Riera+5 more
semanticscholar +1 more source
A novel Photonic Crystal Fiber sensor with an octagonal cladding and hollow core is developed to detect kerosene adulteration. At 2.2 THz, the sensor achieves 96.80% relative sensitivity, an effective mode loss of 0.00667 cm⁻¹, and minimal confinement loss (6.78 × 10⁻8 dB m−1).
Mohammad Abdullah‐Al‐Shafi+1 more
wiley +1 more source
Correction: Shen et al. Black Phosphorus Nano-Polarizer with High Extinction Ratio in Visible and Near-Infrared Regime. <i>Nanomaterials</i> 2019, <i>9</i>, 168. [PDF]
Shen W+7 more
europepmc +1 more source
GaAs Growth on Ge‐Buffered Discontinuous (111)‐Faceted V‐Groove Silicon Substrates
This work demonstrates antiphase boundary (APB)‐free GaAs growth on Ge buffers formed on discontinuous (111) V‐groove Si substrates. By tailoring the Ge buffer morphology to form well‐defined facets, APB formation is suppressed. This approach offers alternative solutions to achieving APB‐free III–V integration on CMOS‐compatible on‐axis silicon without
Makhayeni Mtunzi+14 more
wiley +1 more source
Low Power Digital Multimedia Telecommunication Designs [PDF]
Koon-Shik Cho, Jun‐Dong Cho
openalex +1 more source