Results 81 to 90 of about 16,639 (202)
Recent Progress and Future Prospects of LWIR T2SL InAs/GaSb Detectors on GaAs
Advanced Photonics Research, Volume 7, Issue 7, July 2026.InAs/GaSb LWIR type‐II superlattices (T2SLs) on GaAs substrates are cost‐effective and offer higher yield. However, due to a relatively large lattice mismatch, a high density of threading dislocations is created, which is detrimental to device performance.
Paradeisa E. O’Dowd Phanis +5 more
wiley +1 more source
Tellurium Extraction from the Unique Independent Tellurium Ores in China by Bioleaching
, 2011 This study was designed to investigate tellurium bioleaching from the unique independent low-grade tellurium ores containing tetradymite, joseite, pyrite, chalcopyrite, silica, and a minor amount of dolomite, which is the first discovered scattered ...
Ya Fei Guo +3 more
core +1 more source
Advanced Science, Volume 13, Issue 37, 3 July 2026.Inspired by natural amino acid polymer‐melanin systems, this study strategically incorporated tellurocysteine to develop advanced radiation‐shielding materials. This approach transformed the primary interaction mechanism between melanin‐based materials and incident photons from Compton scattering to the photoelectric effect. Tellurocysteine‐polymerized
Wei Chen +6 more
wiley +1 more source
Chemistry of tellurium applied to rubber [PDF]
A study of tellurium and its compounds in rubber has been carried out by using them as cross linking agents and as ultra-accelerating agents when employed together with a tetraalkylthiuram disulphide.
De Silva, Kaluachchi G.K.
core +1 more source
Advanced Science, Volume 13, Issue 37, 3 July 2026.This work presents a low‐concentration electrolyte enabled by hybrid organic Se/Te additives (DPDSe/DPDTe) that restructures solvation, boosts polysulfide dissolution, and provides dual‐site synergistic catalysis, delivering high capacity and stable cycling in Li–S coin and pouch cells, supporting high‐energy, high‐power operation.
Ruihua Li +10 more
wiley +1 more source
Advanced Electronic Materials, Volume 12, Issue 13, 6 July 2026.Metastable superstructure and emergent spin fluctuation in self‐intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ ABSTRACT Intercalated van der Waals (vdW) magnetic materials host unique magnetic properties due to the interplay of competing interlayer and intralayer exchange couplings, which depend on the intercalant concentration within the van der ...
Clayton Conner +15 more
wiley +1 more source
Embedded Direct‐Written Organic Micro‐TEGs for High‐Efficiency Skin‐Heat Harvesting
Advanced Electronic Materials, Volume 12, Issue 13, 6 July 2026.A finite‐element–guided design of direct‐written organic micro‐thermoelectric generators is presented for efficient skin‐heat harvesting. Embedding PEDOT:PSS/PBFDO thermoelectric legs within flexible substrates suppresses interfacial heat losses and enhances vertical heat flow.
Milad Jabri +4 more
wiley +1 more source
Advanced Energy Materials, Volume 16, Issue 25, 1 July 2026.The role of each Mn site in the Na3‐xMn[Mn(CN)6]·zH2O compounds’ redox activity was investigated using a combined experimental–computational approach, which shows that only the low‐spin Mn‐C site undergoes redox changes (Mn1+ to Mn4+), while high‐spin Mn‐N remains unchanged. The study confirms the presence of the Mn1+ intermediate and newly reveals its
Zhenying Li +11 more
wiley +1 more source
Israel Journal of Chemistry, Volume 66, Issue 4, July 2026.W(SxSe1−x)2, Te:WSSe, and WS2@WSSe nanotubes were synthesized through controlled precursor composition. The W(SxSe1−x)2 and Te:WSSe nanotubes exhibit small‐diameter (<30 nm), high‐yield, and well‐defined excitonic transitions. Composition tuning via S/Se ratios increases interlayer spacing with higher Se content. The incorporation of Te remains limited
Philip Nathaniel Immanuel +11 more
wiley +1 more source
PtTe2 interface engineering for enhanced near‐infrared photoresponse in black silicon photodetectors
InfoMat, Volume 8, Issue 7, July 2026.Highly responsive near‐infrared (NIR) photodetectors are essential for advanced photoelectric systems. In this work, a high‐responsivity NIR photodetector is developed by integrating a PtTe2/black silicon (B‐Si) heterostructure into a Si p‐i‐n diode, where B‐Si introduces sub‐bandgap defect states to enhance NIR absorption and the PtTe2 layer induces ...
Guanyu Mi +12 more
wiley +1 more source