Results 251 to 260 of about 4,518,875 (307)
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Science, 1969
The presence of substantial polar cooling of Venus, as derived from microwave interferometry at 10.6 cm wavelength, is shown to be open to doubt. Other microwave measurements give little evidence for significant poleward variation in temperature on the planet.
W A, Gale, A C, Sinclair
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The presence of substantial polar cooling of Venus, as derived from microwave interferometry at 10.6 cm wavelength, is shown to be open to doubt. Other microwave measurements give little evidence for significant poleward variation in temperature on the planet.
W A, Gale, A C, Sinclair
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Temperatures in the polar wind
Planetary and Space Science, 1974Abstract The thermal structure of the plasma in the polar wind is examined. With O + H + Joule heating as the mechanism for heating the plasma, it is found that O + and H + temperatures are significantly greater than the electron temperature. With the adopted input parameters the O + H + temperature difference is relatively small.
G.J. Bailey, R.J. Moffett
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Temperature-dependent polarization effects in Ce:LiLuF
Applied Optics, 2001We report on tuned-laser, pump-probe-gain, and fluorescence yield studies of the effect that crystal temperature plays on the polarized emission characteristics of Ce:LiLuF. It was found that varsigma-polarized emission at the 327-nm fluorescence spectra peak is characterized by smaller laser pulse buildup times, higher small-signal gains, and smaller ...
A J, McGonigle +2 more
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Aerosols and Polar Temperature Changes
Science, 1975Calculations indicate that aerosols are not directly responsible for the present increase in ice abundance in the Northern Hemisphere. Indeed it appears that aerosols cause heating of the atmosphere near the poles. The present background aerosol density at 85°S latitude causes a temperature increase of ∼ 0.2°K, while that at 85°N causes an increase of ∼
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Electron temperature in polar semiconductors
physica status solidi (b), 1968AbstractUsing the electron temperature approximation an analysis is made of the scattering integral in an intense electric field for a semiconductor with an arbitrary non‐parabolic energy band. The electron temperature is then derived for a purely polar semiconductor with a non‐parabolic dispersion law such as n‐type InSb. The calculations only include
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