Results 191 to 200 of about 10,701 (237)

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Fabrication of Pyridinic Nitrogen‐Functionalized Carbon Cloth for High‐Performance Iron‐Chromium Flow Batteries

open access: yesAdvanced Functional Materials, EarlyView.
The carbon cloth electrode with targeted pyridinic nitrogen doping, achieved via urea pyrolysis, effectively modulates the adsorption of Cr(II) species and enhances electron transfer, leading to significantly improved kinetics of the Cr(II)/Cr(III) reaction. The material demonstrates a high discharge capacity of 689.3 mAh and an energy efficiency of 72.
Jinfeng Yi   +9 more
wiley   +1 more source

Pushing the boundary of quantum advantage in hard combinatorial optimization with probabilistic computers. [PDF]

open access: yesNat Commun
Chowdhury S   +14 more
europepmc   +1 more source

Thermo‐Mechanically Recyclable Smart Textiles from Circularly Knitted Liquid Crystal Elastomer Fibers

open access: yesAdvanced Functional Materials, EarlyView.
Reprogrammable multi‐material smart textiles knitted from liquid crystal elastomer fibers undergo 2D and 3D deformation under thermal and photo stimuli. Circularly knitted tubular structures reversibly contract in radial and axial directions, enabling autonomous climbing, liquid release, and micro pumping.
Xue Wan   +8 more
wiley   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav   +6 more
wiley   +1 more source

Chocolate Tempering: A Perspective. [PDF]

open access: yesCryst Growth Des
Stobbs JA   +3 more
europepmc   +1 more source

Effect of Tempering Temperature on Microstructure and Mechanical Properties of Cr-Ni-Mo-V Rotor Steel. [PDF]

open access: yesMaterials (Basel)
Zhao C   +7 more
europepmc   +1 more source

Home - About - Disclaimer - Privacy