Results 141 to 150 of about 48,451 (258)

Fuzzy temporal logic based railway passenger flow forecast model. [PDF]

open access: yesComput Intell Neurosci, 2014
Dou F, Jia L, Wang L, Xu J, Huang Y.
europepmc   +1 more source

Post‐Translational Regulation of CD8+ T Cell Fate and Dysfunction in Tumor Immunity

open access: yesAdvanced Science, EarlyView.
This review delineates how post‐translational modifications (PTMs) function as a central regulatory interface governing CD8+ T cell activation, differentiation, persistence, and exhaustion in antitumor immunity. By integrating antigenic, metabolic, and microenvironmental cues, diverse PTM programs coordinate transcriptional and chromatin states that ...
Zihao Zhou   +8 more
wiley   +1 more source

Monolithic UV‐Laser Programming of Photothermally Meta‐Morphing SMA Structures: Dual‐Encoded Kirigami Mechanics and Photonic Absorbance

open access: yesAdvanced Science, EarlyView.
A monolithic manufacturing strategy is presented for photothermal shape memory alloy (SMA) meta‐morphing structures. Using a single‐step UV‐laser process, the mechanical compliance is programmed via kirigami patterning while optical absorbance is simultaneously tuned through surface oxidation.
Hyunsoo Kim   +8 more
wiley   +1 more source

Organic Thin‐Film Transistors for Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy   +2 more
wiley   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong   +4 more
wiley   +1 more source

Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering

open access: yesAdvanced Electronic Materials, EarlyView.
Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis   +13 more
wiley   +1 more source

Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems

open access: yesAdvanced Electronic Materials, EarlyView.
Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang   +9 more
wiley   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

open access: yesAdvanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende   +4 more
wiley   +1 more source

A Polymorphic Reconfigurable Multi‐Electrode Device Based on Electrically Bistable Nanostructured Metallic Films

open access: yesAdvanced Electronic Materials, EarlyView.
A polymorphic reconfigurable multi‐electrode device based on electrically bistable nanostructured metallic films. The adaptive reconfiguration properties of the nanostructured network under specific input voltages drive the reprogrammability of the device. This system can be employed for the implementation of polymorphic devices, which can be used both
Silvia Bressan   +4 more
wiley   +1 more source

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

open access: yesAdvanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal   +2 more
wiley   +1 more source

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