Results 191 to 200 of about 2,058,874 (276)

Terahertz radiation generation from metallic electronic structure manipulated by inhomogeneous DC-fields. [PDF]

Sci Rep, 2021
Lin H, Liu CP.
europepmc   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, Volume 13, Issue 13, 3 March 2026.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source

Laser Patterning of Aligned Carbon Nanotubes Arrays: Morphology, Surface Structure, and Interaction with Terahertz Radiation. [PDF]

Materials (Basel), 2021
Sedelnikova OV, Gorodetskiy DV, Kurenya AG, Baskakova KI, Shlyakhova EV, Makarova AA, Gorokhov GV, Bychanok DS, Kuzhir PP, Maksimenko SA, Bulusheva LG, Okotrub AV.   +11 more
europepmc   +1 more source

The Interplay of Magnetic Order with the Electronic Scattering and Crystal‐Field Effects in a Metallic Ferromagnet

Advanced Science, Volume 13, Issue 13, 3 March 2026.
The interplay between magnetic ordering and crystal electric field (CEF) excitations plays a pivotal role in defining the low‐energy electrodynamics of quantum materials. By probing the temperature‐dependent THz conductivity in a rare‐earth‐based metallic ferromagnet, we uncover a microscopic connection between localized and itinerant electrons ...
Payel Shee, Tanaya Halder, Chia‐Jung Yang, Nainish Tickoo, Ratiranjan Samal, Ruta Kulkarni, Shishir K. Pandey, Vikas Kashid, Ashis K. Nandy, Arumugam Thamizhavel, Anamitra Mukherjee, Shovon Pal   +11 more
wiley   +1 more source

Superior terahertz radiation detection through novel micro circular log-periodic antenna engineered with an advanced evolutionary neural network algorithm. [PDF]

Microsyst Nanoeng
Zhou R, Wang J, Xie Z, Sun Y, Lu G, Yeow JTW.   +5 more
europepmc   +1 more source

Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs. [PDF]

Sensors (Basel), 2021
Calvo-Gallego J, Delgado-Notario JA, Velázquez-Pérez JE, Ferrando-Bataller M, Fobelets K, Moussaouy AE, Meziani YM.   +6 more
europepmc   +1 more source

Semiconducting THO‐C3N Monolayers for Ultrahigh Anisotropic Carrier Mobility

Advanced Science, Volume 13, Issue 17, 23 March 2026.
A precise site‐specific N‐doping strategy that drives a secondary electronic transition in net W is proposed, enabling the electronic properties transition from metal to Dirac semimetal and ultimately to semiconductor. The obtained THO‐C3N‐2 and THO‐C3N‐3 semiconductors exhibit high carrier mobilities and pronounced mobility anisotropy, with THO‐C3N‐2 ...
Rui Tan, Xueqing Chen, Jifeng Luo, Zhe Xue, Zehou Li, Xiaolin Wei, Zhenkun Tang, Gaokuo Zhong   +7 more
wiley   +1 more source

Terahertz Radiation Driven Nonlinear Transport Phenomena in Two-Dimensional Tellurene. [PDF]

Nano Lett
Mönch E, Moldavskaya MD, Golub LE, Bel'kov VV, Wunderlich J, Weiss D, Gumenjuk-Sichevska JV, Niu C, Ye PD, Ganichev SD.   +9 more
europepmc   +1 more source

Emerging Device Applications From Strong Light–Matter Interactions in 2D Materials

Advanced Science, Volume 13, Issue 17, 23 March 2026.
Two‐dimensional semiconductors enable extremely compact optoelectronic devices such as solar cells, sensors, LEDs, and lasers. Their strong light–matter interactions allow efficient light emission, detection, and energy conversion. This review article discusses the recent progress in integrating these materials with optical cavities and nanostructures ...
Janani Archana K, Kumar Shwetabh, Reyas Ali, Ramji Velayutham, Koustav Das, Abhishek Mondal, Prashant Kumar, Surendra B. Anantharaman   +7 more
wiley   +1 more source

Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries. [PDF]

Front Optoelectron
Xing R, Guo H, Guo B, Yu G, Zhang P, Zhou J, Yang A, Li Y, Hao C, Yue H, Zeng Z, Zhang X, Zhang B.   +12 more
europepmc   +1 more source