Results 191 to 200 of about 142,095 (261)

Perching of quadrotor using adaptive second-order continuous control in the presence of uncertainties. [PDF]

Sci Rep
Gupta S, Nandanwar A, Dhar NK, Behera L, Samanta S.   +4 more
europepmc   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source

Global Fast Terminal Sliding Mode Control for Trajectory Tracking Control of Quadrotor UAVs. [PDF]

Sensors (Basel)
Gao R, Wu S, Li H.
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Array‐Level Characterization of Cryogenic RRAM

Advanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu, Ruofei Hu, Zhixing Jiang, Feng Xu, Bin Gao, Jianshi Tang, He Qian, Huaqiang Wu   +7 more
wiley   +1 more source

Multi-State Probabilistic Computing Using Floating-Body MOSFETs Based on the Potts Model for Solving Complex Combinatorial Optimization Problems. [PDF]

Adv Mater
Cheong S, Lee SH, Han J, Park JY, Shin DH, Jang YH, Shim SK, Kim S, Hwang CS, Han JK.   +9 more
europepmc   +1 more source

Research Progress and Applications of Non‐Carrier‐Injection Electroluminescence

Advanced Electronic Materials, EarlyView.
Non‐carrier‐injection electroluminescence (NCI‐EL) uses AC fields and displacement currents to trigger light from internal charge reservoirs, enabling minimalist emitters with remotely coupled terminals. This review maps shared mechanisms across organics, GaN, quantum dots, and TMDCs, compares planar, interdigital, single‐terminal, and coaxial designs,
Wei Huang, Jianbi Le, Rong Chen, Zhixian Lin, Xiongtu Zhou, Yongai Zhang, Chaoxing Wu   +6 more
wiley   +1 more source

Medical decision analysis for personalized oncology at the patient bedside. [PDF]

Tumori
Casali PG, Licitra L, Provenzano S, Pellegrini I, Fabbroni C, Franza A, Giani C, Callegaro D, Cavalieri S, Lanza F, Frezza AM, Vincenzi B, Muzzini R, Trama A, Miceli R, Tinè G, Torri V, Sanchini V, Hosni H, Bruzzi P.   +19 more
europepmc   +1 more source

Electrically and Magnetically Tunable Charge–Density–Wave Transport in Quasi‐2D h‐BN/1T‐TaS2 Field Effect Devices

Advanced Electronic Materials, EarlyView.
Perpendicular electric and magnetic fields are used to control charge‐density‐wave (CDW) domain dynamics in quasi‐two‐dimensional h‐BN/1T‐TaS2 field‐effect devices. Electrical gating produces a non‐monotonic modulation of the CDW depinning threshold — behavior distinct from quasi‐one‐dimensional CDW systems.
Jonas O. Brown, Maedeh Taheri, Nicholas R. Sesing, Tina T. Salguero, Alexander A. Balandin   +4 more
wiley   +1 more source

Scalable Ising machine composed entirely of Si transistors. [PDF]

Sci Adv
Yun SY, Kim JP, Jeong J, Lee SW, Chung YS, Kim S, Choi YK.   +6 more
europepmc   +1 more source