Results 171 to 180 of about 2,278,353 (292)

Atomic‐Scale Mechanisms of Multi‐Resistance States in HfOx‐Based RRAM: Evolution of Atomic Electric Fields and Oxygen Vacancies

open access: yesAdvanced Science, EarlyView.
Atomic‐scale mechanisms governing multilevel resistive switching in HfOx‐based RRAM are reveal through advanced TEM. Thermally driven m‐phase rotation ([101]↔[011]) enables selective oxygen vacancy migration, which reconstructs atomic electric fields and dictates conduction—from Schottky/Poole‐Frenkel emission to Ohmic transport.
Wen Sun   +9 more
wiley   +1 more source

The Applicability of Zipf's Law in Report Text

open access: yesLecture Notes on Language and Literature, 2023
openaire   +1 more source

Origins of Graphite Resistivity: Decoupling Stacking Fault and Rotational Misorientation

open access: yesAdvanced Science, EarlyView.
Interfacial dislocations critically influence interlayer transport in van der Waals (vdW) materials, yet quantifying their individual contributions remains challenging. We measure graphite's c‐axis resistivity and develop a decoupling strategy, revealing a resistivity ratio of ∼4507:74:1 for rotational misorientations, stacking faults, and AB stacking,
Weipeng Chen   +6 more
wiley   +1 more source

Equitable access to cochlear implants: a perspective on social justice and international obligations. [PDF]

open access: yesFront Public Health
Suazo-Díaz P   +3 more
europepmc   +1 more source

Deformable Eutectic Alloy With Near‐Theoretical Yield Strength via Hierarchical Nanoscale Multiphases and Sessile Defects

open access: yesAdvanced Science, EarlyView.
A CoCrFeNiTa0.4 eutectic high‐entropy alloy achieves a near‐theoretical yield strength of 2.6 GPa with 13.6% plasticity. This breakthrough stems from a hierarchical nanostructure (FCC‐Laves lamellae with L12/D022 precipitates), which alleviates the inter‐phase modulus/hardness mismatch through synergistic strengthening and toughening, guiding the ...
Yusha Luo   +10 more
wiley   +1 more source

Wafer‐Scale Bandgap‐Tunable MoS2/PbS Phototransistors Enabled by Solution Processing

open access: yesAdvanced Science, EarlyView.
This work advances bandgap‐tunable MoS2/PbS phototransistors by introducing lateral heterojunctions, which enable superior tunable bandgap (1.24–0.61 eV) via Type‐II alignment. Plasma‐enhanced solution processing ensures uniform 4‐inch wafer‐scale fabrication with 97% yield.
Ziheng Tang   +5 more
wiley   +1 more source

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