How can the training of French midwives be revolutionized? [PDF]
Di Marco L.
europepmc +1 more source
Atomic‐scale mechanisms governing multilevel resistive switching in HfOx‐based RRAM are reveal through advanced TEM. Thermally driven m‐phase rotation ([101]↔[011]) enables selective oxygen vacancy migration, which reconstructs atomic electric fields and dictates conduction—from Schottky/Poole‐Frenkel emission to Ohmic transport.
Wen Sun +9 more
wiley +1 more source
Evidence-based evaluation and optimization paths of public health emergency response plans in China: a text analysis and empirical study based on 31 provinces. [PDF]
Fan L, Wang S.
europepmc +1 more source
The Applicability of Zipf's Law in Report Text
openaire +1 more source
Origins of Graphite Resistivity: Decoupling Stacking Fault and Rotational Misorientation
Interfacial dislocations critically influence interlayer transport in van der Waals (vdW) materials, yet quantifying their individual contributions remains challenging. We measure graphite's c‐axis resistivity and develop a decoupling strategy, revealing a resistivity ratio of ∼4507:74:1 for rotational misorientations, stacking faults, and AB stacking,
Weipeng Chen +6 more
wiley +1 more source
Equitable access to cochlear implants: a perspective on social justice and international obligations. [PDF]
Suazo-Díaz P +3 more
europepmc +1 more source
A CoCrFeNiTa0.4 eutectic high‐entropy alloy achieves a near‐theoretical yield strength of 2.6 GPa with 13.6% plasticity. This breakthrough stems from a hierarchical nanostructure (FCC‐Laves lamellae with L12/D022 precipitates), which alleviates the inter‐phase modulus/hardness mismatch through synergistic strengthening and toughening, guiding the ...
Yusha Luo +10 more
wiley +1 more source
Neurodevelopmental justice: rethinking adolescent criminal responsibility in Puerto Rico. [PDF]
Ramírez-Rivera E +1 more
europepmc +1 more source
Wafer‐Scale Bandgap‐Tunable MoS2/PbS Phototransistors Enabled by Solution Processing
This work advances bandgap‐tunable MoS2/PbS phototransistors by introducing lateral heterojunctions, which enable superior tunable bandgap (1.24–0.61 eV) via Type‐II alignment. Plasma‐enhanced solution processing ensures uniform 4‐inch wafer‐scale fabrication with 97% yield.
Ziheng Tang +5 more
wiley +1 more source
Decision-making components and times revealed by the single-trial electroencephalogram. [PDF]
Weindel G, Borst JP, van Maanen L.
europepmc +1 more source

