Results 231 to 240 of about 580,928 (348)

Is there truth in fiction? Lessons from readers' responses to dementia fiction. [PDF]

open access: yesMed Humanit
Lugea J   +3 more
europepmc   +1 more source

Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction

open access: yesAdvanced Functional Materials, EarlyView.
This study examines the surface characteristics of AlInP (001), crucial for advanced solar cells and photoelectrochemical devices. Using theoretical modeling and experiments, it identifies how phosphorus‐rich and indium‐rich surfaces create mid‐gap states that pin the Fermi level and influence ultrafast electron dynamics.
Mohammad Amin Zare Pour   +11 more
wiley   +1 more source

Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy

open access: yesAdvanced Functional Materials, EarlyView.
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan   +11 more
wiley   +1 more source

Carbon Nanotube 3D Integrated Circuits: From Design to Applications

open access: yesAdvanced Functional Materials, EarlyView.
As Moore's law approaches its physical limits, carbon nanotube (CNT) 3D integrated circuits (ICs) emerge as a promising alternative due to the miniaturization, high mobility, and low power consumption. CNT 3D ICs in optoelectronics, memory, and monolithic ICs are reviewed while addressing challenges in fabrication, design, and integration.
Han‐Yang Liu   +3 more
wiley   +1 more source

Discovery of an Intrinsic Antiferromagnetic Semiconductor EuSc2Te4 With Magnetism‐Driven Nonlinear Transport

open access: yesAdvanced Functional Materials, EarlyView.
EuSc₂Te₄, an antiferromagnetic semiconductor, exhibits a nonlinear Hall effect (NLHE) characterized by quadratic current–voltage behavior. Combined experimental and theoretical studies reveal that this NLHE is linked to its antiferromagnetism and involves contributions from the quantum metric.
Seng Huat Lee   +15 more
wiley   +1 more source

High‐Entropy Liquid Metal Process for Transparent Ultrathin p‐Type Gallium Oxide

open access: yesAdvanced Functional Materials, EarlyView.
This work introduces a doping strategy for harvesting ultrathin Ga oxide layers using a multi‐elemental Ga‐based liquid metal alloy. The incorporation of trivalent In metal into the self‐limiting oxide formed on the alloy's surface is enabled by the existence of atomically dispersed Pt, Au, and Pd.
Laetitia Bardet   +14 more
wiley   +1 more source

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