Results 81 to 90 of about 134,188,628 (239)
Dirac‐Source Linear X‐Ray Detection Diode
Monolayer graphene imparts near linear current‐voltage behavior to a perovskite X‐ray detection diode, contrasting with conventional diode‐like responses. Exploiting graphene's Dirac dispersion and a Schottky‐like back‐to‐back junction, the device achieves six‐orders‐of‐magnitude dark current suppression while retaining linearity over 200 V, enabling ...
Babar Shabbir +8 more
wiley +1 more source
EQUIDISTRIBUTION OF HIGHER DIMENSIONAL GENERALIZED DEDEKIND SUMS AND EXPONENTIAL SUMS
We consider generalized Dedekind sums in dimension n, defined as sum of products of values of periodic Bernoulli functions. For the generalized Dedekind sums, we associate a Laurent polynomial.
Lee, Jungyun +2 more
core +1 more source
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar +9 more
wiley +1 more source
The hybrid power mean of the generalized Gauss sums and the generalized two-term exponential sums
<abstract><p>This article applied the properties of character sums, quadratic character, and classical Gauss sums to study the calculations of the hybrid power mean of the generalized Gauss sums and the generalized two-term exponential sums. It also provided exact formulas for calculating these hybrid power means.</p></abstract>
Xue Han, Tingting Wang
openaire +2 more sources
Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang +7 more
wiley +1 more source
An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek +12 more
wiley +1 more source
New Mixed Exponential Sums and Their Application
The main purpose of this paper is to introduce a new mixed exponential sums and then use the analytic methods and the properties of Gauss sums to study the computational problems of the mean value involving these sums and give an interesting ...
Yu Zhan, Xiaoxue Li
core
Eu‐doped {ZnCdO/ZnO} structures grown on Si are developed, showcasing dual‐functionality controlled by europium doping. While high europium concentration transforms the device into an ultrafast, self‐powered photodetector, low‐doped structures can be used as an optoelectronic synapse.
Igor Perlikowski +3 more
wiley +1 more source
Closed form evaluations of some infinite series comprising sums of exponentiated multiples of two-term and three-term Catalan number linear combinations are presented using three contrasting approaches.
Larcombe, Peter J.
core
A post‐growth method is demonstrated to realize energy‐tunable quantum emitters in GaAs/GaAsN/GaAs core–multishell nanowires on a Si substrate. By combining the N‐induced bandgap reduction with H‐ion irradiation, the GaAsN potential landscape is engineered, enabling isolated, narrow emission lines that function as single‐photon sources with g(2)(0) ∼ 0.
Akant Sagar Sharma +10 more
wiley +1 more source

