Fabrication of High‐Density Multimodal Neural Probes Based on Heterogeneously Integrated CMOS
A chiplet‐based methodology democratizes active neural probe development on standard bulk CMOS services. This yields the first probe combining high‐density electrophysiology (416 electrodes) with calcium imaging (832 photodiodes) and complete on‐chip signal processing across 13 shanks.
Ju Hee Mun +10 more
wiley +1 more source
A High-Precision Screen-Printed Glucose Sensor with In Situ Impedance-Based HCT Correction and Temperature Compensation. [PDF]
Lu M, Cheng J, Lei Q, Guo J, Chen K.
europepmc +1 more source
Short‐range order in 2D transition metal dichalcogenides is revealed as a new design paradigm. Driven by chemical affinity and atomic size, it governs properties across scales. Weak ordering tunes site‐resolved magnetism and d‐band centers, while strong ordering eliminates gap states to open band gaps.
Hanyu Liu +3 more
wiley +1 more source
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
A Hybrid Diagnostic Framework with Compensation Algorithms for Inherent Rotor Faults Using Rotor Experiments. [PDF]
Huang SC, Pham TT, Nguyen TD, Chiu YJ.
europepmc +1 more source
Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo +12 more
wiley +1 more source
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang +7 more
wiley +1 more source
All-sapphire-based high-temperature pressure sensor system with in situ temperature compensation: innovative cavity design, fabrication, and APSC-FFT algorithm. [PDF]
Tan J +5 more
europepmc +1 more source
Precipitation‐modulated recrystallization enables a programmable bimodal harmonic architecture in a high‐entropy alloy, delivering 1–2 GPa yield strength with >10% ductility from −196 °C to 700 °C. The resulting broad‐temperature robustness arises from the synergy of dual‐mode nanoprecipitation, harmonic core–shell topology, and temperature‐adaptive ...
Wei Li +5 more
wiley +1 more source
Advances in High-Temperature Sensor Technologies: Material System, Sensing Principles, Drift Compensation, and Encapsulation Reliability. [PDF]
Huang X +6 more
europepmc +1 more source

